A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofIon/Ioff

Salimian, Faranak; Dideban, Daryoosh

doi:10.1149/2.0071802jss

Cited by 13 publications

(7 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Salimian et al proposed a silicene nanotube FET by transfer matrix method. 163 They investigated the effect of channel length, chirality and diameter of a tube to the channel current, and concluded that I max /I min ratio varies by chirality, diameter of silicene nanotubes, and perpendicular electric field, while OFF current strongly depends on characteristics of silicene nanotubes. Patel et al reported that, in a dual-gate silicene FET, decreasing channel length degrades device parameters due to increased leakage whereas decreasing oxide thickness improves these parameters due to increased gate control over the silicene channel uniformly.…”

Section: Silicene-based Technology Applications 41 Silicene Transistorsmentioning

confidence: 99%

Silicene, silicene derivatives, and their device applications

et al. 2018

View full text Add to dashboard Cite

Silicene, the ultimate scaling of a silicon atomic sheet in a buckled honeycomb lattice, represents a monoelemental class of two-dimensional (2D) materials similar to graphene but with unique potential for a host of exotic electronic properties. Nonetheless, there is a lack of experimental studies largely due to the interplay between material degradation and process portability issues. This review highlights the state-of-the-art experimental progress and future opportunities in the synthesis, characterization, stabilization, processing and experimental device examples of monolayer silicene and its derivatives. The electrostatic characteristics of the Ag-removal silicene field-effect transistor exhibit ambipolar charge transport, corroborating with theoretical predictions on Dirac fermions and Dirac cone in the band structure. The electronic structure of silicene is expected to be sensitive to substrate interaction, surface chemistry, and spin-orbit coupling, holding great promise for a variety of novel applications, such as topological bits, quantum sensing, and energy devices. Moreover, the unique allotropic affinity of silicene with single-crystalline bulk silicon suggests a more direct path for the integration with or revolution to ubiquitous semiconductor technology. Both the materials and process aspects of silicene research also provide transferable knowledge to other Xenes like stanene, germanene, phosphorene, and so forth.

show abstract

Section: Silicene-based Technology Applications 41 Silicene Transistorsmentioning

confidence: 99%

Silicene, silicene derivatives, and their device applications

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Salimian et al applied the transfer matrix method to investigate the transfer properties of silicene nanotube field effect transistor. They reported that although carbon nanotubes are not appropriate for transistors action, silicene nanotubes, based on rolled-up silicene sheets, are applicable material because of having intrinsic band gap and silicene nanotube field effect transistor can switch between ON and OFF states [36]. Unlike intense studies on the mechanical and electronic feature of silicon nanotubes [37][38][39][40], limited research has been devoted to the thermal properties of silicene nanotubes until now.…”

Section: Introductionmentioning

confidence: 99%

Thermal transport in silicene nanotubes: Effects of length, grain boundary and strain

Khalkhali

Khoeini

Rajabpour

2019

International Journal of Heat and Mass Transfer

View full text Add to dashboard Cite

Thermal transport behavior in silicene nanotubes has become more important due to the application of these promising nanostructures in the engineering of next-generation nanoelectronic devices. We apply non-equilibrium molecular dynamics (NEMD) simulations to study the thermal conductivity of silicene nanotubes with different lengths and diameters. We further explore the effects of grain boundary, strain, vacancy defect, and temperature in the range of 300-700 K on the thermal conductivity. Our results indicate that the thermal conductivity varies with the length approximately in the range of 24-34 W/m.K but exhibits insensitivity to the diameter and chirality. Besides, silicene nanotubes consisting of the grain boundary exhibit nearly 30% lower thermal conductivity compared with pristine ones. We discuss the underlying mechanism for the conductivity suppression of the system consisting of the grain boundary by calculating the phonon power spectral density. We find that by increasing the defect concentration and temperature, the thermal conductivity of the system decreases desirably. Moreover, for strained nanotubes, we observe unexpected changes in the thermal conductivity, so that the conductivity first increases significantly with tensile strain and then starts to decrease. The maximum thermal conductivity for the armchair and zigzag edge tubes appears at the strains about 3% and 5%, respectively, which is about 28% more than that of the unstrained structure.

show abstract

“…In another investigation, silicene nanotubes were employed to fabricate a FET with an ON/OFF ratio of about 10 7 , which is higher than that of graphene counterpart 36 . In Ref.…”

Section: Introductionmentioning

confidence: 99%

First designing of a silicene-based optical MOSFET with outstanding performance

Emami-Nejad

Mir

Lorestaniweiss

et al. 2023

Sci Rep

View full text Add to dashboard Cite

Miniaturized integrated optical devices with low power consumption have long been considered hot candidates for plasmonic applications. While 2D materials such as graphene have been proposed for this purpose, they suffer from large propagation loss and low controllability at room temperature. Here, a silicene-based optical MOSFET with excellent performance is designed to achieve integrated circuit optical technology. The designed device is comprised of a silicene optical waveguide whose switching operation is performed by a gate and has a structure similar to an enhancement MOSFET with a formed channel. Unlike graphene, the surface conductivity of silicene can be controlled by both chemical potential and an electric field perpendicular to its surface. This unique feature of silicene is used to design and simulate an optical-MOSFET with transverse electric polarization at 300 K. The salient characteristics of the optical device include its nanoscale dimensions, ultra-low insertion loss of 0.13 dB, infinite extinction ratio, and quality factor of 688, proposing it as a promising tool for optical integration.

show abstract

A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofI_on/I_off

Cited by 13 publications

References 32 publications

Silicene, silicene derivatives, and their device applications

Silicene, silicene derivatives, and their device applications

Thermal transport in silicene nanotubes: Effects of length, grain boundary and strain

First designing of a silicene-based optical MOSFET with outstanding performance

Contact Info

Product

Resources

About