A novel high-conductivity IGBT (HiGT) with a short circuit capability

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

“…The next major improvement came for the addition of "n enhancement" layer with the aim of further increasing the electron injection at the cathode side of the drift region. Some of the most effective designs in achieving this include the IEGT (Injection Enhanced Gate Transistor) [1,2], the CSTBT (Carrier Store Trench Bipolar Transistor) [3], the Trench EST (Emitter Switched Thyristor) [4,5], the HiGT (High Conductivity IGBT) [6,7] and the DMOS SPT+ IGBT (Soft Punch Through plus) [8]. The higher the doping concentration of the "n enhancement", the more significant the improvement in the on-state characteristics is.…”

IGBT design optimisation for solid-state circuit breaker applications

“…These techniques are based on the high-conductivity IGBT (HiGT) [9,10] (Figure 2c) and the clustered IGBT (CIGBT) [11] (Figure 2d) which were chosen because they work the same technique of conductivity modulation and have a simple structure. Their simplicity has an impact on the few additional steps in the implementation and the few optimisation variables.…”

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

“…In 1979 and 1980, there were some more publications [6]- [13] related to the invention of IGBT with different design concepts. Generally, there are few main categories of discrete IGBTs [14], some examples of which are DMOS IGBT [15][16], trench IGBT [17]- [20], soft punch through IGBT [21], injection enhanced insulated gate bipolar transistor [22], [23], carrier stored gate bipolar transistor [24], high-conductivity IGBT [25] and super junction bipolar transistor [26] [27]. In contrast to discrete IGBTs, the integrated IGBT has complementary metal-oxide-semiconductor (CMOS) compatibility and hence is the…”