2013
DOI: 10.1088/1674-4926/34/11/115004
|View full text |Cite
|
Sign up to set email alerts
|

A novel interconnect optimal buffer insertion model considering the self-heating effect

Abstract: Considering the self-heating effect, an accurate expression for the global interconnection resistance per unit length in terms of interconnection wire width and spacing is presented. Based on the proposed resistance model and according to the trade-off theory, a novel optimization analytical model of delay, power dissipation and bandwidth is derived. The proposed optimal model is verified and compared based on 90 nm, 65 nm and 40 nm CMOS technologies. It can be found that more optimum results can be easily obt… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2014
2014
2018
2018

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 9 publications
0
1
0
Order By: Relevance
“…There fore the optimal delay per unit length can be obtained, (Yan et al, 2013;Narasimhan and Sridhar, 2010) Equation (16) …”
Section: Delay and Bandwidth Interconnectionsmentioning
confidence: 99%
“…There fore the optimal delay per unit length can be obtained, (Yan et al, 2013;Narasimhan and Sridhar, 2010) Equation (16) …”
Section: Delay and Bandwidth Interconnectionsmentioning
confidence: 99%