A Novel Method for Improving the Performance of InP/InGaAsP Multiple-Quantum-Well Mach-Zehnder Modulators by Phase Shift Engineering

Analysis of Segmented Traveling-Wave Optical Modulators

“…Therefore, it requires a thin active layer to provide a large electrical field, and the series push-pull may not be an efficient way because it halves the electric field in each optical waveguide. Most of the reported quantum-well-based MZM used lumped-element electrodes and single-arm modulation [21]- [24]. In these previous works, the active modulation layer typically consisted of 20-30 quantum wells, with a total intrinsic layer thickness of 0.4 m. The MQW detuning energy was set around 60 meV to keep optical absorption loss low.…”

“…In this case, the traveling-wave electrode can be used to improve the performance [3]- [6], [19]. The microwave transmission lines for most of the previously demonstrated traveling-wave EAMs (TWEAM) were built directly on top of the optical waveguides, and they generally had a low microwave impedance (20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30), slow microwave velocity, and large microwave loss. Fortunately, these devices were all short in length (200-300 m) so that the velocity mismatch and microwave loss were not severe problems.…”

High-Power, High-Linearity, Heterogeneously Integrated III-V on Si MZI Modulators for RF Photonics Systems

“…They also offer the key ability to be integrated with additional components to form a photonic integrated circuit (PIC). High performance III-V MZI modulators have been developed based on GaAs [12] and InP [13], with the InP devices offering the opportunity to combine the modulator with other components (e.g., laser, photodetector) to develop PICs [14] for commonly used telecom bands. The use of photonic integration to create subsystems with high performance and also significantly reduced cost and SWaP has been a driving force in recent years, and particularly, the use of Silicon Photonics-taking advantage of CMOS foundries, processes, and many billions of dollars of previous investments.…”

Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si

“…Semiconductor based devices offer the chance to obtain highly linear performance together with small size, low cost, and the ability to integrate them with additional components to form photonic integrated circuit (PIC) devices. High performance MZMs have been developed based on GaAs [3] and InP [4], with the InP devices offering the opportunity to combine the MZM with other components (e.g. laser, photodetector) to develop photonics integrated circuits [5] for commonly used telecom bands.…”