A Novel Micromachining Technique to Fabricate Released GaAs Microstructures with a Rectangular Cross Section

Paik, Seung-Joon; Kim, Jongpal; Park, Sangjun; Kim, Setae; Koo, Chiwan; Lee, Seung-Ki; Cho, Dong‐il Dan

doi:10.1143/jjap.42.326

Cited by 10 publications

(7 citation statements)

References 14 publications

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“…The stacking faults not being perpendicular to ⟨111⟩ directions are seen by discontinuous shifts in the Moiréfringes (inset (i) in Supporting Information, Figure S5b) while the threading dislocations are visible through terminating Moiréfringes (inset (ii) in Supporting Information, Figure S5b). Both kind of 34,35 The GaAs(111)B substrate is protected against the etchant by the thin SiO x layer. The 1.5 μm long free-standing core−shell NWs were etched for 2 min.…”

mentioning

confidence: 99%

Molecular Beam Epitaxy Growth of GaAs/InAs Core–Shell Nanowires and Fabrication of InAs Nanotubes

Rieger

Luysberg²,

Schäpers

et al. 2012

Nano Lett.

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We present results about the growth of GaAs/InAs core-shell nanowires (NWs) using molecular beam epitaxy. The core is grown via the Ga droplet-assisted growth mechanism. For a homogeneous growth of the InAs shell, the As(4) flux and substrate temperature are critical. The shell growth starts with InAs islands along the NW core, which increase in time and merge giving finally a continuous and smooth layer. At the top of the NWs, a small part of the core is free of InAs indicating a crystal phase selective growth. This allows a precise measurement of the shell thickness and the fabrication of InAs nanotubes by selective etching. The strain relaxation in the shell occurs mainly via the formation of misfit dislocations and saturates at ~80%. Additionally, other types of defects are observed, namely stacking faults transferred from the core or formed in the shell, and threading dislocations.

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confidence: 99%

Molecular Beam Epitaxy Growth of GaAs/InAs Core–Shell Nanowires and Fabrication of InAs Nanotubes

Rieger

Luysberg²,

Schäpers

et al. 2012

Nano Lett.

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“…After the MBE growth, chemical etching was performed on the sample in Fig. 2(a): first GaAs etching, and subsequently, In droplet etching [37]. For the GaAs etching, the sample was dipped in a H 3 PO 4 :H 2 O 2 :H 2 O (3:1:75) solution for 25 s. With this etching, the surface morphology is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Low-Density Quantum Dot Molecules by Selective Etching Using in Droplet as a Mask

Lee¹,

Wang²,

Hirono³

et al. 2011

IEEE Trans. Nanotechnology

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We demonstrate low-density quantum dot molecules (QDMs) by selective etching using In droplets as a mask. Selective etching is performed with InGaAs QDMs buried underneath GaAs capping layer, on which In droplets are formed by droplet epitaxy using molecular beam epitaxy. During the chemical etching, the droplets act as a mask and QDMs underneath the droplets that only survive. Photoluminescence measurement from the selectively etched QDMs in mesa structures shows a much reduced intensity, which indicates low-density QDMs. This technique provides a simple and flexible method to attain low-density QDMs. The density can be easily modified by the control of the size and density of In droplets, which is suitable for single QDM spectroscopy and for their device applications.Index Terms-Atomic force microscopy (AFM), droplets, low density, molecular beam epitaxy (MBE), photoluminescence (PL), quantum dot molecules (QDMs), selective etching.

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“…Etchants can be either “anisotropic” 40 or “isotropic” 41 where anisotropic refers to an etchant that preferentially attacks certain crystallographic planes. The selection of an etchant is highly dependent on the material and for a given material no practical etchant of either type may be available.…”

Section: Background: Internal Channel Fabrication By Forming Channelsmentioning

confidence: 99%

Machining and Ceramic/Ceramic Joining to Form Internal Mesoscale Channels

Case

Ren

Kwon

et al. 2004

Int J Applied Ceramic Tech

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Ceramics and semiconducting materials with internal channels are crucial in a variety of diverse technologies such as “lab on a chip,” fuel cell applications, and cooling of microelectronics. In this paper, techniques for fabricating internal channels in brittle materials first are reviewed. Then, the mechanical machining of surface channels in 99.99% pure alumina partially sintered at 600°C and 700°C is discussed. After machining, the partially sintered alumina is sintered to a density of about 97% of theoretical and then joined to 96% pure alumina to convert the surface channels into internal channels.

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A Novel Micromachining Technique to Fabricate Released GaAs Microstructures with a Rectangular Cross Section

Cited by 10 publications

References 14 publications

Molecular Beam Epitaxy Growth of GaAs/InAs Core–Shell Nanowires and Fabrication of InAs Nanotubes

Molecular Beam Epitaxy Growth of GaAs/InAs Core–Shell Nanowires and Fabrication of InAs Nanotubes

Low-Density Quantum Dot Molecules by Selective Etching Using in Droplet as a Mask

Machining and Ceramic/Ceramic Joining to Form Internal Mesoscale Channels

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