A novel PHL-emitter bipolar transistor—Fabrication and characterization

Enhanced current gain in SiC power BJTs using a novel surface accumulation layer transistor concept

“…11, we have plotted peak current gain for different temperatures against 1/K B T of the power SALTran and the power SiC structure. The slope of the natural logarithm of peak current gain curve for different temperatures gives the activation energy which is nothing but the difference of the effective bandgap narrowing of the emitter and the base [17]. We see that the activation energy comes out to be À44.5 and À37.5 meV for power SiC SALTran and power SiC BJT, respectively.…”