Enhanced current gain in SiC power BJTs using a novel surface accumulation layer transistor concept

Kumar, M. Jagadesh; Parihar, Vinod

doi:10.1016/j.mee.2005.04.002

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Cited by 6 publications

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“…While several studies have been reported on the electrical modeling of 4H-SiC, [5][6][7] few studies have been performed on its optical modeling because very limited material parameters were available. For example, it is essential to know the absorption coefficient spectra in order to estimate photoresponsivity at the wavelength of interest but no experimental data have been reported at wavelengths below $300 nm.…”

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confidence: 99%

Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes

Cha¹,

Sandvik

2008

jjap

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Optimal physical models and material parameters for 4H-SiC avalanche photodiodes (APDs) were studied using a two-dimensional device simulation tool. In the models, we took account of temperature-dependent impact ionization and absorption coefficient as a function of wavelength. The absorption coefficient spectra derived in this work exhibited a rapid increase below ∼300 nm, which can be qualitatively incorporated into indirect and direct band transition models. The simulated characteristics were in good agreement with the measured characteristics.

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confidence: 99%