A Novel Power Loop Parasitic Extraction Approach for Paralleled Discrete SiC MOSFETs on Multilayer PCB

Chen, Jimin; Peng, Han; Cheng, Zhengwang; Liu, Xianchao; Xin, Qingming; Kang, Yong; Wu, Jinglin; Chu, Xu

doi:10.1109/jestpe.2021.3071494

Cited by 6 publications

(3 citation statements)

References 46 publications

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“…The maximum imbalance current Δi dmax is theoretically determined by the equivalent impedance ΔR dson +(ΔL d + ΔL s )/t r . From Equation (7), the ratio of imbalance current, which is defined as 𝛾 can be expressed as follows: (11), by increasing L m , the 𝛾 decreases greatly. However, the large value for L m increases the volume, weight and cost of transformer.…”

Section: General Analysis Of Imbalance Current (δId) With Pt Compensatormentioning

confidence: 99%

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A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer

Sarfejo

Allahyari

Bahrami

et al. 2021

IET Power Electronics

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SiCMOSFETs are widely employed in power converters due to their high switching speed and low switching loss. However, their low current rating due to the limited active area restricts their high power applications. To apply SiC MOSFETs in high power applications, providing parallel connection is an inevitable choice. To tackle the challenge of imbalanced current sharing problem between parallel SiC MOSFETs, a new passive compensator based on planar transformer (PT) is proposed here. Compared with the conventional transformer compensators, parasitic elements are adjustable and predictable in PT compensators, which is especially important for mass production aims. After explaining the concept of the physical operation of the PT compensator, the whole parasitic elements of the PT compensator are formulated. Based on estimated parasitic elements and using the finite element method (FEM), an optimum PT structure is extracted for imbalances in current sharing of parallel SiC MOSFETs. Afterward, the PT design is discussed in detail and then, a boost converter is constructed. Finally, the experimental results are presented to verify the reliability, accuracy, and effectiveness of the theoretical results.

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Section: General Analysis Of Imbalance Current (δId) With Pt Compensatormentioning

confidence: 99%

“…Generally, three approaches are considered to solve the imbalance current sharing problem in literatures [6][7][8][9][10][11][12][13][14][15][16][17][18]. In [6][7][8], authors try to present a manufacturing approach to produce MOSFET devices with the same parameters. However, this approach is rather hard and costly.…”

Section: Introductionmentioning

confidence: 99%

A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer

Sarfejo

Allahyari

Bahrami

et al. 2021

IET Power Electronics

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“…47,48 For this reason, the leap from silicon technology to other semiconductors derived from WBG materials can cause some problems such as oscillations and electromagnetic interferences (EMI), 49,50 higher harmonic content, 51 cross-talk effects, 52 and the effect of overvoltages on semiconductor shutdown. 53,54 In the literature, many works can be found in which attempts to solve the aforementioned problems are described through solutions that are mainly based on reducing the negative effects of parasite inductances in discrete devices [55][56][57][58] or power modules (embedded bare dies). [59][60][61][62] Taking into account the new trends and technical requirements on this topic (in addition to others such as efficiency, losses, power density, cost, and size-weight ratio), the main features of power modules and discrete devices are explained in this review.…”

Section: Introductionmentioning

confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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Hardware design of a high-current, high step-down ratio Series Capacitor Buck converter prototype for slow-ramped powering of High-Luminosity Large Hadron Collider inner triplet superconducting electromagnets

Otero-Olavarrieta,

Matallana,

Martínez de Alegría

et al. 2024

Applied Energy

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A Novel Power Loop Parasitic Extraction Approach for Paralleled Discrete SiC MOSFETs on Multilayer PCB

Cited by 6 publications

References 46 publications

A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer

A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer

The role of power device technology in the electric vehicle powertrain

Hardware design of a high-current, high step-down ratio Series Capacitor Buck converter prototype for slow-ramped powering of High-Luminosity Large Hadron Collider inner triplet superconducting electromagnets

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