A novel process-compatible fluorination technique with electrical characteristic improvements of poly-Si TFTs

Wang, Shen−De; Lo, Wei-Hsiang; Chang, Tzu-Yun; Lei, Tan Fu

doi:10.1109/led.2005.848095

Cited by 12 publications

(4 citation statements)

References 13 publications

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“…A significant bump at an energy of ∼0.25 eV is observed. This DOS profile is similar to those studied in the literature [25][26][27][28]. DOS distribution of a semiconductor is usually emulated by four bands of donor-like tail states g TD , donor-like bump states g GD (E), acceptorlike tail states g TA (E), and acceptor-like bump states g GA (E).…”

Section: Simulated and Measured I-v Characteristics Of The Poly-si Tftsupporting

confidence: 81%

Drain bias and position dependent performance degradation of dual-gate poly-Si TFTs with undoped region offsets

Hsu¹,

Chen²

2019

Semicond. Sci. Technol.

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In this paper, electrical characteristics of dual-gate polycrystalline silicon (poly-Si) thin film transistors (TFTs) with different undoped region (UR) offsets are investigated. Performance degradation of the poly-Si TFT is dependent on the offset value, offset direction, and offset location. In addition, the degradation is also dependent on the applied drain bias. Significant performance deterioration is observed when the offset is larger than ±0.4 μm. Even an offset in an individual UR can cause the degradation. At a low drain bias of −0.1 V, the degradation is independent on the direction and the location of the offset. When the drain bias increases to −10 V, the performance degradation of the TFT with the positive UR offset significantly reduces. The physical mechanisms underlying the performance variation are studied by analyzing the energy band diagrams, carrier concentration distributions, and electric field distributions.

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Section: Simulated and Measured I-v Characteristics Of The Poly-si Tftsupporting

confidence: 81%

Drain bias and position dependent performance degradation of dual-gate poly-Si TFTs with undoped region offsets

Hsu¹,

Chen²

2019

Semicond. Sci. Technol.

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“…P-Si, a collection of single-crystal silicon grains separated by grain boundaries, shows relatively low-loss and similar mobility to c-Si [ 27 ]. Additionally, the p-Si thin film transistor (TFT) has the merits such as high field effect mobility, high integration and high speed, high-definition display, low power consumption, and self-aligned structures [ 28 , 29 , 30 ]. With these good characteristics, p-Si is a promising material for realizing multilayer active photonic devices and EPICs [ 31 , 32 ].…”

Section: Introductionmentioning

confidence: 99%

Optical Temperature Sensor Based on Polysilicon Waveguides

Yin

Sun

et al. 2022

Sensors

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Traditional temperature detection has limitations in terms of sensing accuracy and response time, while chip-level photoelectric sensors based on the thermo-optic effect can improve measurement sensitivity and reduce costs. This paper presents on-chip temperature sensors based on polysilicon (p-Si) waveguides. Dual-microring resonator (MRR) and asymmetric Mach–Zehnder interferometer (AMZI) sensors are demonstrated. The experimental results show that the sensitivities of the sensors based on AMZI and MRR are 86.6 pm/K and 85.7 pm/K, respectively. The temperature sensors proposed in this paper are compatible with the complementary metal-oxide-semiconductor (CMOS) fabrication technique. Benefitting from high sensitivity and a compact footprint, these sensors show great potential in the field of photonic-electronic applications.

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“…Another important merit of BLA poly‐Si is no protrusion in the TFT channel . The grain boundary defects at the protrusion can degrade the TFT performance, and also affect the bias stability and mechanical bending stability . The flexibility of the ELA TFTs on PI substrates can be a big issue for the foldable and rollable AMOLED displays …”

Section: Introductionmentioning

confidence: 99%

Remarkable Improvement in Foldability of Poly‐Si Thin‐Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly‐Si Thin‐Film Transistor Used for Foldable Displays

Jeong

Lee

et al. 2020

Adv Eng Mater

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Highly robust poly-Si thin-film transistor (TFT) on polyimide (PI) substrate using blue laser annealing (BLA) of amorphous silicon (a-Si) for lateral crystallization is demonstrated. Its foldability is compared with the conventional excimer laser annealing (ELA) poly-Si TFT on PI used for foldable displays exhibiting field-effect mobility of 85 cm 2 (V s) À1 . The BLA poly-Si TFT on PI exhibits the field-effect mobility, threshold voltage (V TH ), and subthreshold swing of 153 cm 2 (V s) À1 , À2.7 V, and 0.2 V dec À1 , respectively. Most important finding is the excellent foldability of BLA TFT compared with the ELA poly-Si TFTs on PI substrates. The V TH shift of BLA poly-Si TFT is %0.1 V, which is much smaller than that (%2 V) of ELA TFT on PI upon 30 000 cycle folding. The defects are generated at the grain boundary region of ELA poly-Si during folding. However, BLA poly-Si has no protrusion in the poly-Si channel and thus no defect generation during folding. This leads to excellent foldability of BLA poly-Si on PI substrate.

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A novel process-compatible fluorination technique with electrical characteristic improvements of poly-Si TFTs

Cited by 12 publications

References 13 publications

Drain bias and position dependent performance degradation of dual-gate poly-Si TFTs with undoped region offsets

Drain bias and position dependent performance degradation of dual-gate poly-Si TFTs with undoped region offsets

Optical Temperature Sensor Based on Polysilicon Waveguides

Remarkable Improvement in Foldability of Poly‐Si Thin‐Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly‐Si Thin‐Film Transistor Used for Foldable Displays

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