2005
DOI: 10.1109/lmwc.2005.860006
|View full text |Cite
|
Sign up to set email alerts
|

A novel pull-up type RF MEMS switch with low actuation voltage

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
4
0

Year Published

2013
2013
2024
2024

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 16 publications
(4 citation statements)
references
References 11 publications
0
4
0
Order By: Relevance
“…3b. Table 1 presents a comparison between the key features of the designed MEMS switch with reported works in the literature [5,6].…”
Section: Fabrication Processmentioning
confidence: 99%
See 1 more Smart Citation
“…3b. Table 1 presents a comparison between the key features of the designed MEMS switch with reported works in the literature [5,6].…”
Section: Fabrication Processmentioning
confidence: 99%
“…Various design techniques are proposed in the literature to reduce the actuation voltage. In [5] a pull-up type RF MEMS switch with low actuation voltage of 4.5 V is presented. In [6], a mechanically coupled low-voltage electrostatic resistive RF multithrow switch with 15 V is proposed.…”
Section: Introductionmentioning
confidence: 99%
“…Over the available conventional solid state switching devices like PIN diode and FET, the RF-MEMS switch has numerous potential advantages for switching function and performs better performance including high bandwidth and good linearity [10]. On the other hand, the RF-MEMS switch has also some limitations during designing and operation such as low power handling, switching speed, low switching lifetime, high actuation voltage and electrostatic discharge [11][12][13][14]. To overcome the challenges faced in RF-MEMS switch, many of researchers have designed and analyzed different types of switches in which different techniques and switching parameters are considered like actuation voltage of switch and switching speed of switch.…”
Section: Introductionmentioning
confidence: 99%
“…To achieve a high isolation usually requires a sufficiently large closing gap, which will further increase the driving voltage. In addition, the signal lines and the top plate have to be realized by two separate process steps, which is inconveniently integrated with millimeter wave circuits [6,7].…”
Section: Introductionmentioning
confidence: 99%