A novel self‐consistent theory of the electronic structure of inversion layers in InSb MIS structures

Abstract

Field effect devices on the basis of InSb are increasingly used in semiconductor technique. Due t o the non-parabolicity of the band structure of the conduction band the theoretical description of such devices is more complicated than for other materials. A simple method for the self-consistent quantum mechanical calculation of the electronic structure of inversion layers in materials with a Kane conduction band is presented which is well suited for the application in semiconductor technique. The method is based on an extension of a modified local density approximation for interface problems. The efficiency of this simple method is shown for the example of InSb by compzring with experiments and with results of earlier laborious self-consistent calculations using wave functions. The necessity is proved to take into account the deviation from the parabolic band structure in the self-consistent calculations.

InN: Fermi level stabilization by low‐energy ion bombardment

“…To investigate the electronic profile further, spacecharge calculations were performed. The calculations were performed by solving the Poisson equation within the modified Thomas-Fermi approximation (MTFA), which accounts for the non-parabolicity of the conduction band [8,15]. [13].…”

Inversion and accumulation layers at InN surfaces

“…The charge-and band bending-profiles were calculated by solving Poisson's equation within the modified Thomas-Fermi approximation (MTFA) [14], using a nonparabolic conduction band and including band gap shrinkage [15]. The calculations were performed using an intrinsic band gap at 300 K of 642 meV [16] (which is reduced to 503 meV in this case due to band gap shrinkage) and a band-edge electron effective mass of 0:045m 0 [6].…”

Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process

“…28,29 The latter density profile is calculated by the modified Thomas-Fermi approximation that involves the NP band obtained by the simplified version of the k"p method. 40 However, this is a simplified scheme to calculate the EEL spectrum with reasonable effort. It is anticipated that the NP dispersion is incorporated in accurate schemes, such as the RPA and the time-dependent LDA, in a complete manner.…”