A novel synthetic route to ether-Free metal alkyl precursors

Whitaker, T. J.; Freer, R.W.; Martin, Trevor; Jones, Anthony; Rushworth, S.

doi:10.1007/bf02659903

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…It has been shown that Grignard reagents can be synthesised in trialkylamine solvents, 11 and we have thus developed a proprietary synthetic route to R 3 M compounds (R~Ga, In) in which the ether solvent is replaced by trialkylamines such as NEt 3 and NMe 2 Et. 8,12 This leads to adducts such as Pr i 3 Ga(NEt 3 ), from which AlGaAs with signi®cantly reduced oxygen contamination has been grown by CBE. 8,12 However, these adducts have low vapour pressures (v1 Torr at 35 ³C) which limits their widespread application in CBE or MOVPE.…”

Section: Introductionmentioning

confidence: 99%

“…8,12 This leads to adducts such as Pr i 3 Ga(NEt 3 ), from which AlGaAs with signi®cantly reduced oxygen contamination has been grown by CBE. 8,12 However, these adducts have low vapour pressures (v1 Torr at 35 ³C) which limits their widespread application in CBE or MOVPE. In a preliminary communication, 13 we described how NEt 3 can be readily displaced from Pr i 3 Ga(NEt 3 ) and Et 3 Ga(NEt 3 ) by the addition of 4,4'-methylenebis(N,N'dimethylaniline) (MBDA) or the multidentate aza-crown ligands 1,4,8,11-tetramethyl-1,4,8,11-tetraazacyclotetradecane (N 4 -aza crown) and 1,4,7,10,13,16-hexamethyl-1,4,7,10,13,16hexaazacyclooctadecane (N 6 -aza crown).…”

Section: Introductionmentioning

confidence: 99%

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Synthesis of ultra-high purity trialkylgallium MOVPE precursors. Crystal structures of triethylgallium and triisopropylgallium adducts with macrocyclic tertiary amines

et al. 2000

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A synthesis and puri®cation route has been developed for base-free trialkylgallium compounds which avoids the use of traditional ether solvents. The R 3 Ga compound (R~Et, Pr i ) is synthesised in triethylamine, NEt 3 , which leads to the adducts R 3 Ga(NEt 3 ). The NEt 3 ligand can be readily displaced by the addition of low volatility bidentate, tetradentate or hexadentate tertiary amines to give adducts of the type (R 3 Ga) x L (x~2, 4, 6), from which base-free R 3 Ga compounds are obtained by mild thermal dissociation. The synthesis and characterisation of these adducts are described and crystal structures reported for the adducts between R 3 Ga (R~Et, Pr i ) and the multidentate macrocyclic amines 1

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis of ultra-high purity trialkylgallium MOVPE precursors. Crystal structures of triethylgallium and triisopropylgallium adducts with macrocyclic tertiary amines

et al. 2000

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“…Therefore, for the production of low oxygen content metal alkyls in general it is necessary to entirely eliminate Et 2 O from the synthesis route. 2,9 However, these adducts have low vapor pressures (< 1 torr at 35°C) which limits their widespread application in CBE or MOVPE. In addition, commercially available R 3 Al reagents are generally of uncertain purity, containing high levels of organic and metallic impurities, so that routes involving RMgX or RLi alkylating agents are preferred for large scale manufacture of high purity R 3 Ga or R 3 In MOCVD precursors.…”

Section: Introductionmentioning

confidence: 99%