2017
DOI: 10.1631/fitee.1500366
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A novel ternary half adder and multiplier based on carbon nanotube field effect transistors

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Cited by 21 publications
(11 citation statements)
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“…The third group is band-to-band tunneling CNTFETs. These transistors have higher cutoff characteristics and low ON currents, and also they are very appropriate for designing ultra-low power and sub-threshold circuits [17].…”
Section: Laser Ablation Methodsmentioning
confidence: 99%
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“…The third group is band-to-band tunneling CNTFETs. These transistors have higher cutoff characteristics and low ON currents, and also they are very appropriate for designing ultra-low power and sub-threshold circuits [17].…”
Section: Laser Ablation Methodsmentioning
confidence: 99%
“…A multiplier circuit in CNTFET technology that used design approach of multi-value logic is offered in [16]. In [17], several designs of half adder and multiplier using ternary logic are presented. In this work, results of the simulation have shown that the proposed circuits have low power consumption and high speed; also in these circuits area is being reduced.…”
Section: Introductionmentioning
confidence: 99%
“…(5) Use transmission gates (TGs) in series, special transistors arrangements, or Resistive Random Access Memory (RRAM) such as: Authors of [28], [29] proposed THAs with (39 and 50 CNT-FETs) and TMULs with (34 and 38 CNTFETs) using cascading TGs, which produced higher propagation delays and PDP. In [30], the authors proposed THA with 90 CNTFETs and TMUL with 62 CNTEFTs using RRAM.…”
Section: A Literature Reviewmentioning
confidence: 99%
“…Electrical characteristics of each CNFET depend on a vector called chiral vector that is specified by false(n1,n2false). Each indices of this vector determines the rolling direction of graphene sheet and tube axis [17–23]. For example, if n1n23kthickmathspace ( k is an integer) SWCNT has semiconductor features and otherwise is conductive [24].…”
Section: Carbon Nanotube Field‐effect Transistorsmentioning
confidence: 99%