A novel tip-induced local electrical decomposition method for thin GeO films nanostructuring

Sheglov, D. V.; Gorokhov, E. B.; Володин, В. А.; Astankova, K. N.; Латышев, А. В.

doi:10.1088/0957-4484/19/24/245302

Cited by 10 publications

(4 citation statements)

References 10 publications

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“…Laser pulse processing of surfaces and thin films is a useful tool for purposes such as the amorphous thin films crystallization [1–6], surface nanostructuring [7–10], laser-induced thin film dewetting [11–12], phase transformation and modification of physical properties of thin films [13–16]. The laser fluence values used for these applications are below the ablation threshold of the irradiated material in order to prevent a loss of material during laser processing.…”

Section: Introductionmentioning

confidence: 99%

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

Teodorescu¹,

Ghica²,

Maraloiu³

et al. 2015

Beilstein J. Nanotechnol.

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SummaryLaser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10–30 mJ/cm2. The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 °C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm2 and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films.

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Section: Introductionmentioning

confidence: 99%

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

Teodorescu¹,

Ghica²,

Maraloiu³

et al. 2015

Beilstein J. Nanotechnol.

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“…GeO(solid) films were additionally deposited onto substrates using thermal re-evaporation in a high-vacuum (10 −7 Pa) flow reactor of thick GeO2<Ge-NC> heterolayers (400-500 nm) grown by the first method (Sheglov, 2008). In such a process, a sample with a GeO2<Ge-NCs> heterolayer was heated to a temperature of 550-600 •C by an ohmic heater.…”

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confidence: 99%

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Gorokhov¹,

Astankova²,

Komonov³

2012

Laser Pulses - Theory, Technology, and Applications

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“…Как известно, при T > 200 • C монооксид германия начинает распадаться на гетерофазную систему, состоящую из диэлектрической матрицы GeO 2 с нанокластерами Ge [8], а при T > 400 • C может испаряться в виде газа GeO [9]. Следовательно, в процессе исследования пленок GeO внешнее воздействие (термическое, пучком электронов, ионов, фотонов) может привести к их распаду или испарению [10,11].…”

Section: Introductionunclassified

О Структуре Тонких Пленок Монооксида Германия

Астанкова¹,

Володин²,

Азаров³

2020

Физика И Техника Полупроводников

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By means of optical (Raman spectroscopy, IR spectroscopy, X-ray photoelectron spectroscopy) and electron microscopic methods, it was found that the atomic structure of stoichiometric germanium monoxide films corresponds to the random bonding model, without the formation of germanium nanoclusters. This structure is metastable and transforms into a structure which is close to random mixture model at a temperature 260 oC and higher. The metastability of solid GeO may be related to the presence of internal mechanical stresses in the atomic network.

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A novel tip-induced local electrical decomposition method for thin GeO films nanostructuring

Cited by 10 publications

References 10 publications

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

О Структуре Тонких Пленок Монооксида Германия

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