A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

“…6,7 In order to improve the electrical properties of tunnel transistors, various methods have been used, including electrically doping or charge plasma, lightly doping, Schottky-Ohmic structure, multimaterial gate, and heterogeneous structures. [8][9][10][11][12][13] In most of previous studies, the main objective has been to reduce am-bipolar and leakage current and the ON-current is not significantly changed. The analog parameters of the above structures have also been less investigated.…”

A Computational Study of an Optimized MOS-Like Graphene Nano Ribbon Field Effect Transistor (GNRFET)

“…To solve this issue, new structures were introduced for GNRFETs (T-GNRFETs) and CNTFETs (T-CNTEFETs). [11][12][13][14][15][16][17] Moreover, many studies were conducted in order to evaluate the performance of these structures under different conditions such as changing the type and thickness of the oxide, source and drain doping concentration, frequency analysis, and examining the non-ideal effects. [18][19][20] Inspired by previous studies, the present study presents a dual-gate MOS (Metal Oxide Semiconductor)-Like GNR (Graphene Nano Ribbon)-FET (Field Effect Transistor) to reduce the off-current as well as improve the ambipolar behavior, short-channel effects, and switching characteristics.…”