Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies

Vadizadeh, Mahdi

doi:10.1007/s10825-018-1136-6

Cited by 23 publications

(25 citation statements)

References 41 publications

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“…The structural parameters of the VHJL-TFET device proposed in Fig. 1 are the same as those of HJL-TFET device proposed in [23] and [22] VHJL-TFET device shown in Fig. 1 is called GaXIn1-XAs/GaYIn1-YSb VHJL-TFET.…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

“…The nonlocal band to band tunneling (BTBT) model is considered to determine the electrical properties of the proposed device. Nonlocal BTBT model considers spatial variations of energy bands and quasi-fermi levels in tunneling path [22,29]. The Hansch model is used to consider the quantum confinement effect as well as interface defects of oxide/semiconductor [12,29].…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

“…and hetero-gate dielectric [11,19]. The use of III-V materials with staggered/broken bandgaps is suggested to increase ION in JLTFET [20][21][22][23]. III-V materials have improved the performance of the JLTFET device, due to high mobility as well as lower band gap [22,24].…”

Section: Introductionmentioning

confidence: 99%

“…JLTFET device with hetero structure is called HJL-TFET. In previous works, HJL-TFET structures are presented horizontally [20][21][22][23]. It is very complex to create horizontal heterojunction structures in HJL-TFET device.…”

Section: Introductionmentioning

confidence: 99%

“…Our simulation results show that selecting a material with larger band gap in the drain-channel region as well as a material with smaller band gap in the source region in VHJL-TFET device drastically reduce the ambipolarity behavior. Based on the simulation results, the improvement of the SS and ON-state current to OFFstate current (ION/IOFF) ratio of VHJL-TFET structure with Y=0.85 and X=0.8 is noticeable compared to the recently proposed structures [11,12,18,21,22,26]. With changes in X and Y, in addition to energy band gap and electron affinity, the electron tunneling effective mass and hole tunneling effective mass are also changed [27].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor

Rajabi

Vadizadeh

2021

Int. J. Mod. Phys. B

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Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb vertical heterojunctionless tunneling field effect transistor (VHJL-TFET) has been suggested to optimize the digital benchmarking parameters. In the proposed VHJL-TFET with type II heterostructure (i.e., [Formula: see text] and [Formula: see text]), slight changes in gate voltage cause switching from OFF-state to ON-state. As a result, the electrical properties of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET are excellent in the sub-threshold region. The heterostructure with III–V semiconductors in the source-channel region increases the ON-state current ([Formula: see text]) of the VHJL-TFET. Comparing the results of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with the simulated devices with type I heterostructure (i.e., [Formula: see text] and [Formula: see text]) and type III heterostructure (i.e., [Formula: see text] and [Formula: see text]) shows the improvement by 26% and 15% in the average subthreshold slope (SS). Sensitivity analysis for VHJL-TFET with the type II heterostructure shows that the sensitivity of OFF-state current ([Formula: see text] to the body thickness ([Formula: see text] and doping concentration ([Formula: see text] is more than the sensitivity of the other main electrical parameters. The Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with a channel length of 20 nm, [Formula: see text] nm, and [Formula: see text] cm[Formula: see text] showed the [Formula: see text] mV/dec, [Formula: see text]/[Formula: see text], and [Formula: see text] mA/um. As a result, Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET can be a reasonable choice for digital applications.

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Section: Device Structure and Simulation Setupmentioning

confidence: 99%

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor

Rajabi

Vadizadeh

2021

Int. J. Mod. Phys. B

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Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero‐material tunneling interfaced charge plasma junctionless tunnel field effect transistor

Sharma

Chaujar

2022

Circuit Theory & Apps

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This paper proposes a dual metal gate, hetero-material tunneling interfaced junctionless tunnel field effect transistor (TFET), (DMG-HJLTFET), utilizing III-V compound semiconducting materials, InAs (low band-gap source material)/GaAs (higher band-gap channel and drain material) by applying the band-gap and dual material gate engineering. The 2-D TCAD simulations have been executed to explore the impact of tunnel gate process variations-work function and length on DC and analog figure of merits (FOMs) of DMG-HJLTFET. The extracted result parameters have also been compared to SMG (single metal gate)-HJLTFET and conventional Si-JLTFET. The DMG-HJLTFET attains improved ON current in the range of 88.5 Â 10 À6 A/μm and OFF current remains as low as 2.89 Â 10 À16 A/μm. It exhibits a high current switching ratio of 3.1 Â 10 11 as compared to SMG-HJLTFET (I ON = 24 Â 10 À6 A/μm and I ON /I OFF = 1.4 Â 10 11 ) and Si-JLTFET (I ON = 7 Â 10 À6 A/μm and I ON /I OFF = 1.8 Â 10 6 ). Further, the radio frequency/microwave (RF) parameters such as power gains (h 12 , UPG, and Gma), f max , and GBP have been compared for all three aforementioned devices. Moreover, the small signal admittance (Y) parameters have been examined to explore the possible scope of DMG-HJLTFET for future internet of everything communications and fast switching applications.

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Performance estimation of junctionless field effect diode

Vadizadeh

2019

Appl. Phys. A

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Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies

Cited by 23 publications

References 41 publications

Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor

Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor

Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero‐material tunneling interfaced charge plasma junctionless tunnel field effect transistor

Performance estimation of junctionless field effect diode

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