A numerical model for solving two dimensional Poisson-Schr&amp;#x00F6;dinger equation in depletion all around operation of the SOI four gate transistor

Jahangir, Shafat; Khosru, Quazi D. M.

doi:10.1109/edssc.2009.5394215

Cited by 5 publications

(6 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The effects of gate bias, gate length, film thickness and source Fermi level on drain current are observed. This model is robust enough to calculate drain current of any gate-all-around device, for example, four-gate SOI transistor [10]. The results obtained by such model can be used to predict the behavior of any gate-all-around device, which is done here for this novel nanowire FET.…”

Section: Discussionmentioning

confidence: 97%

Current-voltage model in depletion all around operation of InSb nanowire field effect transistor

Jahangir

Khosru

2010

2010 IEEE Nanotechnology Materials and Devices Conference

View full text Add to dashboard Cite

In this work, a numerical model of quantum transport in depletion-all-around (DAA) operation of n-InSb nanowire field effect transistor (NWFET) is developed. For incorporating quantum transport, 2D Poisson-Schrödinger equations are solved by finite element method and drain current is calculated by mode-space approach. Effects of gate and drain bias voltages and device dimensions on currentvoltage characteristics are observed.

show abstract

Section: Discussionmentioning

confidence: 97%

Current-voltage model in depletion all around operation of InSb nanowire field effect transistor

Jahangir

Khosru

2010

2010 IEEE Nanotechnology Materials and Devices Conference

View full text Add to dashboard Cite

show abstract

“…Previous works also showed the usage of COMSOL modules and Schrödinger-Poisson equation model solving. [26][27][28][29] Indeed a two-dimensional (2-D) Poisson-Schrödinger solver is needed. It should be capable of producing a potential profile and of calculating the Eigen energy at any cross section between the drain and the source.…”

Section: Physical Model Limitationsmentioning

confidence: 99%

“…It is of course required to obtain various sub band profiles from the drain to the source for calculating the drain current by the mode-space approach, where the transmission coefficient needs to be calculated for different sub band profiles from the drain to the source. 27 By this means, we were able to calculate the light-emission intensity dependence on the drain voltage. To take into account the expected quantum effects in the ultrathin transistor channel, which can be described as a quantum well, we had to use the module in the following way.…”

Section: Physical Model Limitationsmentioning

confidence: 99%

Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices

et al. 2017

View full text Add to dashboard Cite

In the race to realize ultrahigh-speed processors, silicon photonics research is part of the efforts. Overcoming the silicon indirect bandgap with special geometry, we developed a concept of a metal-oxide-semiconductor field-effect transistor, based on a silicon quantum well structure that enables control of light emission. This quantum well consists of a recessed ultrathin silicon layer, obtained by a gate-recessed channel and limited between two oxide layers. The device's coupled optical and electrical properties have been simulated for channel thicknesses, varying from 2 to 9 nm. The results show that this device can emit near infrared radiation in the 1 to 2 μm range, compatible with the optical networking spectrum. The emitted light intensity can be electrically controlled by the drain voltage V ds while the peak emission wavelength depends on the channel thickness and slightly on V ds. Moreover, the location of the radiative recombination source inside the channel, responsible for the light emission, is also controllable through the applied voltages. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

show abstract

“…COMSOL also supports integration with various software such as Excel and MATLAB which is referred to as a "Livelink". While searching for existing research done in COMSOL, it was found that simulations and studies have been done to find the depletion-all-around operation of n-channel four gate field effect transistors via the Poisson-Schrodinger equation [5]. The study of this (steep) heterojunction inevitably passed through the resolution of the system of Schrödinger-Poisson equations due of the quantum effects that occur at the interface.…”

Section: Introductionmentioning

confidence: 99%

Nanometric Modelization of Gas Structure, Multidimensional using COMSOL Software

Bouneb¹,

Kerrour²

2018

IJECE

View full text Add to dashboard Cite

In structures with GaAs, which are the structures most used, because of their physical and electronic proprieties, nevertheless seems a compromise between the increase of doping and reduced mobility. The use of quantum hetero structures can overcome this limitation by creating a 2D carrier gas. Using the COMSOL software this work present three models: the first model computes the electronic states for the heterojunction AlGaAs/GaAs in 1D dimension, the second model computes the electronic states for the heterojunction AlGaAs/GaAs but in 2D dimension (nanowire) and the third model we permitted the study of this hetero junction (steep) wich inevitably involves the resolution of the system of equations Schrödinger-Poisson due to quantum effects that occur at the interface. The validity of this model can be effectuated with a comparison of our results with the result of different models developed in the literature of the related work, from this point of view the validity of our model is confirmed.

show abstract

A numerical model for solving two dimensional Poisson-Schrödinger equation in depletion all around operation of the SOI four gate transistor

Cited by 5 publications

References 9 publications

Current-voltage model in depletion all around operation of InSb nanowire field effect transistor

Current-voltage model in depletion all around operation of InSb nanowire field effect transistor

Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices

Nanometric Modelization of Gas Structure, Multidimensional using COMSOL Software

Contact Info

Product

Resources

About