A one-dimensional SiGe superlattice grown by UHV epitaxy

Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems

“…Examination of experimental results for heteroepitaxial semiconductor growth revealed that generally the transition, between the strained unrelaxed state and the relaxed one (at least partially), occurred at larger thickness than predicted by the simple equilibrium theory [7,8]. This discrepancy is the higher the lower the misfit and the growth temperature.…”

Silicon-Germanium Strained Layer Materials in Microelectronics

“…While some of the first measurements on bulk silicongermanium crystals appeared in 1955, [9] the first high quality epitaxial growth was not reported until 1975 [10] using molecular beam epitaxy (MBE). [11,12] With the high melting point of Si and Ge, electron-beam evaporation cells had to be used in place of the more common effusion cells.…”

Dislocation nucleation in heteroepitaxial semiconducting films

“…In low temperature buffer layer structures (SiGe/Si) an original dislocation structure is observed which corresponds to the dislocation emission in different glide systems by a unique nucleation centre. Misfit m Figure 1 Comparison between the Matthews-Blackeslee model [5] and experiments on Ge x Si 1-x /Si for different growth temperature (750 °C, empty squares [3], 550 °C, full squares [2]) and GaAs/Ge grown at 750 °C [4] but with different cooling rates (fast empty circle, slow full circle). Implicitly in that model the elastic moduli of the film and the substrate are taken identical.…”

“…1) due, at least partially, to nucleation prevention. Figure 1 shows that the onset of relaxation is strongly affected by experimental factors: (i) the growth temperature [2,3] (empty and full squares), (ii) the cooling rate after growth [4] (empty and full circles).…”