Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems

Pichaud, B.; Putero, Magali; Burle, N.

doi:10.1002/(sici)1521-396x(199901)171:1<251::aid-pssa251>3.0.co;2-9

Cited by 17 publications

(17 citation statements)

References 36 publications

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“…Pour le système observé, toutes les DFs sont à caractère vis et se propagent le long des quatre plans denses {111} en laissant des dislocations à 60 • à l'interface film/substrat (approximativement) rectilignes. Puisque les DFs sont vis, elles peuvent être mobiles par glissement dévié multiple, phénomène déjà observé en topographie de RX [16] pour le système GaAs/Ge construit avec un substrat relativement mince. Ce phénomène conduit naturellement à la multiplication des dislocations interfaciales à 60 • dans les directions 110 de l'interface.…”

Section: Resultsunclassified

Relaxation plastique d'un film mince par émission de dislocations filantes vis

Bonnet

Youssef

Neily

et al. 2008

Comptes Rendus. Physique

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Section: Resultsunclassified

Relaxation plastique d'un film mince par émission de dislocations filantes vis

Bonnet

Youssef

Neily

et al. 2008

Comptes Rendus. Physique

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“…(For some recent aspects see, e.g., [1,2].) Initiated by the technical need to prevent strain relaxation in the structures and to control their defect densities, extensive research has been carried out concerning the underlying strain relaxation mechanisms, that means the formation of semicoherent interfaces with misfit dislocations in the boundary.…”

Section: Introductionmentioning

confidence: 99%

Atomistic Modeling of Misfit Dislocation Network Variants for Ge/Si(111) Interfaces

Dornheim

Teichler

2000

phys. stat. sol. (b)

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“…Therefore the measured peak shift of -5.64 ± 0.1 cm -1 corresponds to a stress of 1.41 ± 0.03 GPa. In the case of a fully strained Si cap layer, the tensile stress r f in the Si cap can be calculated with the following equation [6]:…”

Section: Micro-raman Spectroscopymentioning

confidence: 88%

Raman scattering studies of ultrashallow Sb implants in strained Si

O'Reilly

Bennett

McNally

et al. 2007

J Mater Sci: Mater Electron

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Sheet resistance (R s ) reductions are presented for antimony doped layers in strained Si. We use microRaman spectroscopy to characterise the impact of a low energy (2 keV) Sb implantation into a thin strained Si layer on the crystalline quality and resultant stress in the strained Si. The use of 325 nm UV laser light enables us to extract information from the top~9 nm of the strained Si layer. Prior to implantation the Si layer is fully strained with a tensile stress value~1.41 GPa, in agreement with the calculated theoretical maximum on a strain relaxed buffer with 17% Ge content. There is a clear decrease in the intensity of the Si Raman signal following Sb implantation. The lattice damage and lattice recovery achieved by subsequent rapid thermal anneal (RTA) is quantified using the amplitude and full width at half maximum (FWHM) of the crystalline Si peak. The shift of the Raman Si peak is a key parameter in the interpretation of the spectra. The ion-implanted sample is studied in terms of a phonon coherence length confinement model. Carrier concentration effects are seen to play a role in the Raman shift following electrical activation of the Sb atoms by RTA.

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Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems

Cited by 17 publications

References 36 publications

Relaxation plastique d'un film mince par émission de dislocations filantes vis

Relaxation plastique d'un film mince par émission de dislocations filantes vis

Atomistic Modeling of Misfit Dislocation Network Variants for Ge/Si(111) Interfaces

Raman scattering studies of ultrashallow Sb implants in strained Si

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