A Passive Gamma Radiation Dosimeter Using Graphene Field Effect Transistor

Jain, Sonam; Gajarushi, Ashwini S.; Gupta, Ankur; Rao, V. Ramgopal

doi:10.1109/jsen.2019.2958143

Cited by 13 publications

(6 citation statements)

References 32 publications

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“…Notably, 2D TMDCs offer a plethora of sensing possibilities due to their ability to introduce physical defects (vacancy or interstitial) and create unique midgap states through chemical functionalization of the surface, which offers distinct electrical responses to a range of volatile organic compounds (VOCs). Among various 2D materials, graphene , and MoS 2 have been the most explored materials demonstrating their ability to sense a range of VOCs. A few groups have also demonstrated the sensing ability of WS2, WSe2, PtSe2, SnS2, h-BN, and phosphorene.…”

Section: Unique and Wide Range Of Applications Of 2d Materialsmentioning

confidence: 99%

A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges

Shrivastava

Rao

2021

Nano Lett.

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This Mini Review attempts to establish a roadmap for two-dimensional (2D) material-based microelectronic technologies for future/disruptive applications with a vision for the semiconductor industry to enable a universal technology platform for heterogeneous integration. The heterogeneous integration would involve integrating orthogonal capabilities, such as different forms of computing (classical, neuromorphic, and quantum), all forms of sensing, digital and analog memories, energy harvesting, and so forth, all in a single chip using a universal technology platform. We have reviewed the state-of-the-art 2D materials such as graphene, transition metal dichalcogenides, phosphorene and hexagonal boron nitride, and so forth, and how they offer unique possibilities for a range of futuristic/disruptive applications. Besides, we have discussed the technological and fundamental challenges in enabling such a universal technology platform, where the world stands today, and what gaps are required to be filled.

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Section: Unique and Wide Range Of Applications Of 2d Materialsmentioning

confidence: 99%

A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges

Shrivastava

Rao

2021

Nano Lett.

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“…Due to the modulation of the graphene channel's sheet carrier concentration n by holes generated in the gate oxide [23,24], the sheet carrier concentration n gradually increases, and R S gradually decreases during irradiation. However, due to the irradiation process, new impurities and defects are introduced into the graphene and graphene/gate oxide interfaces [28], resulting in enhanced Coulomb scattering, decreased carrier mobility µ, and a gradual increase in R S . The change rule of the sheet resistance R S is consistent with the changing trend of the carrier mobility µ, so it can be seen that the change in the electrical properties under proton irradiation is mainly affected by the carrier mobility.…”

Section: Effect Of Proton Irradiation On the Electrical Characteristi...mentioning

confidence: 99%

“…Partial recovery of carrier mobility after irradiation at a fluence of 5 × 10 11 p/cm 2 can be analyzed in reference [23,28,29]. The proton irradiation effect is a combined irradiation effect, so the results of studies with other radiation sources were used to explain this experiment.…”

Section: Effect Of Proton Irradiation On the Electrical Characteristi...mentioning

confidence: 99%

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

Lu,

Guo,

Lei

et al. 2023

Electronics

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In this article, the effects of high-energy proton irradiation on top-gate graphene field-effect transistors (GFETs) were investigated by using 20 MeV protons. The basic electrical parameters of the top-gate GFETs were measured before and after proton irradiation with a fluence of 1 × 1011 p/cm2 and 5 × 1011 p/cm2, respectively. Decreased saturation current, increased Dirac sheet resistance, and negative drift in the Dirac voltage in response to proton irradiation were observed. According to the transfer characteristic curves, it was found that the carrier mobility was reduced after proton irradiation. The analysis suggests that proton irradiation generates a large net positive charge in the gate oxide layer, which induces a negative drift in the Dirac voltage. Introducing defects and increased impurities at the gate oxide/graphene interface after proton irradiation resulted in enhanced Coulomb scattering and reduced mobility of the carriers, which in turn affects the Dirac sheet resistance and saturation current. After annealing at room temperature, the electrical characteristics of the devices were partially restored. The results of the technical computer-aided design (TCAD) simulation indicate that the reduction in carrier mobility is the main reason for the degradation of the electrical performance of the device. Monte Carlo simulations were conducted to determine the ionization and nonionization energy losses induced by proton incidence in top-gate GFET devices. The simulation data show that the ionization energy loss is the primary cause of the degradation of the electrical performance.

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“…Jain et al [ 24 ] introduced a graphene-based field-effect transistor which was used as a dosimeter, proving that electronic changes in characteristics such as the Dirac voltage and p-doping occurred after gamma irradiation, affecting the mobility of electrons. The back gate was used as a substrate, and a graphene monolayer was transferred onto the substrate, forming the required graphene-based field-effect transistor assembly, which was then irradiated using a Co-60 radiation source with a dosage ranging from 1 kGy to 20 kGy, showing a sensitivity of approximately 1V/kGy.…”

Section: Introductionmentioning

confidence: 99%

Monolayer Graphene Radiation Sensor with Backend RF Ring Oscillator Transducer

2022

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This paper proposes a new graphene gamma- and beta-radiation sensor with a backend RF ring oscillator transducer employed to convert the change in the graphene resistivity due to ionizing irradiation into a frequency output. The sensor consists of a CVD monolayer of graphene grown on a copper substrate, with an RF ring oscillator readout circuit in which the percentage change in frequency is captured versus the change in radiation dose. The novel integration of the RF oscillator transducer with the graphene monolayer results in high average sensitivity to gamma irradiation up to 3.82 kΩ/kGy, which corresponds to a percentage change in frequency of 7.86% kGy−1 in response to cumulative gamma irradiation ranging from 0 to 1 kGy. The new approach helps to minimize background environmental effects (e.g., due to light and temperature), leading to an insignificant error in the output change in frequency of the order of 0.46% when operated in light versus dark conditions. The uncertainty in readings due to background light was analyzed, and the error in the resistance was found to be of the order of 1.34 Ω, which confirms the high stability and selectivity of the proposed sensor under different background effects. Furthermore, the evolution of the graphene’s lattice defect density due to radiation was observed using Raman spectroscopy and SEM, indicating a lattice defect density of up to 1.780 × 1011/cm2 at 1 kGy gamma radiation, confirming the increase in the graphene resistance and proving the graphene’s sensitivity. In contrast, the graphene’s defect density in response to beta radiation was 0.683 × 1011/cm2 at 3 kGy beta radiation, which is significantly lower than the gamma effects. This can be attributed to the lower p-doping effect caused by beta irradiation in ambient conditions, compared with that caused by gamma irradiation. Morphological analysis was used to verify the evolution of the microstructural defects caused by ionizing irradiation. The proposed sensor monitors the low-to-medium cumulative range of ionizing radiations ranging from 0 to 1 kGy for gamma radiation and 0 to 9 kGy for beta radiation, with high resolution and selectivity, filling the research gap in the study of graphene-based radiation sensors at low-to-medium ionizing radiation doses. This range is essential for the pharmaceutical and food industries, as it spans the minimum range for affecting human health, causing cancer and DNA damage.

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A Passive Gamma Radiation Dosimeter Using Graphene Field Effect Transistor

Cited by 13 publications

References 32 publications

A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges

A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

Monolayer Graphene Radiation Sensor with Backend RF Ring Oscillator Transducer

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