A photonic platform for donor spin qubits in silicon

Morse, K. J.; Abraham, Rohan J. S.; DeAbreu, Adam; Bowness, Camille; Richards, Timothy S.; Riemann, H.; Абросимов, Н. В.; Becker, Peter; Pohl, H.‐J.; Thewalt, M. L. W.; Simmons, Stephanie

doi:10.1126/sciadv.1700930

Cited by 108 publications

(131 citation statements)

References 66 publications

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“…The singlet/triplet qubit was initialized by resonantly pumping one arm of the lambda transition, for example initializing into the singlet state by selectively pumping 1s:A:T ⇔ 1s:T 2 :Γ 7 , as described in Ref. [28]. Following this, a mechanical shutter blocked the resonant light.…”

Section: A Singlet-triplet T1 Temperature Dependencementioning

confidence: 99%

Characterization of the Si : Se+ Spin-Photon Interface

et al. 2019

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Silicon is the most developed electronic and photonic technological platform and hosts some of the highest-performance spin and photonic qubits developed to date. A hybrid quantum technology harnessing an efficient spin-photon interface in silicon would unlock considerable potential by enabling ultra-long-lived photonic memories, distributed quantum networks, microwave to optical photon converters, and spin-based quantum processors, all linked using integrated silicon photonics. However, the indirect bandgap of silicon makes identification of efficient spin-photon interfaces nontrivial. Here we build upon the recent identification of chalcogen donors as a promising spin-photon interface in silicon. We determined that the spin-dependent optical degree of freedom has a transition dipole moment stronger than previously thought (here 1.96(8) Debye), and the T1 spin lifetime in low magnetic fields is longer than previously thought (> 4.6(1.5) hours). We furthermore determined the optical excited state lifetime (7.7(4) ns), and therefore the natural radiative efficiency (0.80(9) %), and by measuring the phonon sideband, determined the zero-phonon emission fraction (16(1) %). Taken together, these parameters indicate that an integrated quantum optoelectronic platform based upon chalcogen donor qubits in silicon is well within reach of current capabilities.

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Section: A Singlet-triplet T1 Temperature Dependencementioning

confidence: 99%

Characterization of the Si : Se+ Spin-Photon Interface

et al. 2019

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“…With knowledge of the extent, the atoms may be appropriately placed to optimize these interactions [10,11]. Qubit schemes being currently investigated that use excited states include a variety of species [6,12] including double donors such as selenium [13]. Amazingly, in spite of their ubiquity and enormous technical importance, measurement of the state radius of any isolated silicon impurity is lacking after more than six decades of research [14].…”

Section: Introductionmentioning

confidence: 99%

Radii of Rydberg states of isolated silicon donors

Litvinenko

et al. 2018

Phys. Rev. B

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We have performed high field magnetoabsorption spectroscopy on silicon doped with a variety of single and double donor species. The magnetic field provides access to an experimental magnetic length, and the quadratic Zeeman effect, in particular, may be used to extract the wave-function radius without reliance on previously determined effective mass parameters. We were, therefore, able to determine the limits of validity for the standard one-band anisotropic effective mass model. We also provide improved parameters and use them for an independent check on the accuracy of effective mass theory. Finally, we show that the optically accessible excited-state wave functions have the attractive property that interactions with neighbors are far more forgiving of position errors than (say) the ground state.

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“…Furthermore, of particular interest in the context of long-lived spinbased quantum memories, are specific spin transitions which show an increased resilience to dominant sources of noise (e.g. magnetic or electric field noise) [20][21][22] . Prominent examples of systems with such magnetic field noise resilient transitions include bismuth donors in silicon, where the donor electron spin coherence time reaches seconds 20 , as well as rare-earth dopants (e.g.…”

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confidence: 99%

Tuning high-Q superconducting resonators by magnetic field reorientation

et al. 2019

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Superconducting resonators interfaced with paramagnetic spin ensembles are used to increase the sensitivity of electron spin resonance experiments and are key elements of microwave quantum memories. Certain spin systems that are promising for such quantum memories possess 'sweet spots' at particular combinations of magnetic fields and frequencies, where spin coherence times or linewidths become particularly favorable. In order to be able to couple high-Q superconducting resonators to such specific spin transitions, it is necessary to be able to tune the resonator frequency under a constant magnetic field amplitude. Here, we demonstrate a high quality, magnetic field resilient superconducting resonator, using a 3D vector magnet to continuously tune its resonance frequency by adjusting the orientation of the magnetic field. The resonator maintains a quality factor of > 10 5 up to magnetic fields of 2.6 T, applied predominantly in the plane of the superconductor. We achieve a continuous tuning of up to 30 MHz by rotating the magnetic field vector, introducing a component of 5 mT perpendicular to the superconductor.

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A photonic platform for donor spin qubits in silicon

Abstract: Chalcogen donors in silicon enable a scalable photonic cavity quantum electrodynamics solution for universal quantum computing.

Cited by 108 publications

References 66 publications

Characterization of the Si : Se+ Spin-Photon Interface

Characterization of the Si : Se+ Spin-Photon Interface

Radii of Rydberg states of isolated silicon donors

Tuning high-Q superconducting resonators by magnetic field reorientation

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