A Physical-based Method for Parameter Extraction of On-Chip Spiral Inductor

Goñi, A.; Pino, J. del; García, José Regidor; González, B.; Khemchandani, Sunil L.; Hernández, A.

doi:10.1109/sced.2007.384068

Cited by 3 publications

(1 citation statement)

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“…In the model, the single-inductor model is a wideband π-model with resistor R p added in series with capacitor C p , which permits the characterization of an inductor over a wider frequency range. The proposed model can be extracted directly from S-parameters obtained by EM simulation or the measured data, using the equations adapted from [13], [14], and (1)-(3), with ports 3 and 4 being grounded…”

Section: Introductionmentioning

confidence: 99%

Coupling Effects Between On-Chip Inductors in the Millimeter-Wave Regime

Kang

Tan

Brinkhoff

et al. 2010

IEEE Electron Device Lett.

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Coupling effects between on-chip spiral inductors operating in the millimeter-wave (mm-wave) regime have been investigated. The trend of the coupling factor as a function of inductor spacing and number of turns is found, and the implications of this for radio-frequency (RF) and mm-wave circuit layout are discussed. A series of coupled circular spiral inductors with different number of turns and distance was fabricated in a 0.18-μm CMOS process and measured up to 65 GHz. A new SPICE-compatible scalable equivalent circuit model for coupled inductors on silicon is also developed and verified by measurements. The model can help RF and mm-wave circuit designers to characterize the coupling effects of neighboring inductors, optimize layout to save expensive chip area, and achieve first-pass silicon success.Index Terms-CMOS, coupled inductors, coupling effects, millimeter-wave (mm-wave) integrated circuit (IC), mutual inductance, radio-frequency integrated circuit (RFIC), scalable model, π-model.

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Section: Introductionmentioning

confidence: 99%