A physical model for MOSFET output resistance

Abstract

14to CLM , DlBL and SCBE, respectively. Each component DlBL SCBE 12can be evaluated separately. 25-*"Od6

Performance Enhancements in Scaled Strained-SiGe pMOSFETs With $ \hbox{HfSiO}_{x}/\hbox{TiSiN}$ Gate Stacks

“…6, where DIBL is seen to be lower in the short channel strained SiGe devices than in the Si control devices. Since DIBL relates to the L EFF through a negative exponential, a small difference in L EFF causes a significant difference in DIBL [30]. The lower DIBL for the strained SiGe devices therefore correlates as expected with the stable V TH roll-off, which is usually due to DIBL.…”

Improved self-gain in deep submicrometer strained silicon–germanium pMOSFETs with HfSiO /TiSiN gate stacks

“…The L EFF extracted for the 100 nm gate length Si and SiGe device was 65 nm and 90 nm respectively. The larger L EFF in the SiGe device results in higher V EA and output resistance [8]. Sub-surface punch-through is also likely to be reduced in the strained SiGe devices compared with the Si control because sub-surface boron diffusion will be less in the strained SiGe device.…”

“…shown by Huang et al [8] that DIBL is related to the effective channel length (L EFF ) through a negative exponential, hence DIBL increases rapidly as L EFF is reduced. The parameter L EFF is the difference between the lithographic gate length (L G ) and the dopant out-diffusion length (∆L) [16] which in turn dependent on the diffusivity of the junction dopant (boron for pMOSFETs) in the semiconductor.…”

“…The MOSFET cut-off frequency increases as the gate length (L G ) is reduced whereas the self-gain reduces with L G due to drain induced barrier lowering (DIBL) [8]. As the MOSFET L G is scaled, there is an increase in the drain conductance (g DS ) due to short channel effects like DIBL, channel length modulation and substrate-current induced body effect [8]. [6].…”

Performance comparison of channel engineered deep sub-micrometer pseudo SOI n-MOSFETs

“…This parameter in nano regime MOSFET depends on usual triode region, different short channel effects like channel length modulation (CLM), drain induced barrier lowering (DIBL) and hot carrier effects. Among all mechanisms, DIBL has the greatest impact on the maximum R o [10]. In case of SH SDODEL, reduced Drain Induced Barrier Lowering (DIBL) contributes to the improvement in the output resistance (R o ).…”