A Planar-Gate High-Conductivity IGBT (HiGT) With Hole-Barrier Layer

Mori, M.; Oyama, Kenichi; Arai, Takao; Sakano, J.; Nishimura, Yutaka; Masuda, K.; Saito, Kazutoshi; Uchino, Yuki; Homma, Hiroshi

doi:10.1109/ted.2007.895874

Cited by 39 publications

(18 citation statements)

References 9 publications

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“…In the same manner, a corresponding data field was created from the DESSIS results and evaluated using Eq. (12). As shown in Fig.…”

Section: δImentioning

confidence: 82%

“…In the following, we illustrate the application of the above theory using two examples experienced during the optimization of high voltage IGBTs [12] and their junction terminations [13]. The two example geometries are sketched in Fig.…”

Section: Examples Based On Two-dimensional Device Simulationmentioning

confidence: 99%

“…In this geometry, the peak concentration of an n-doped hole-barrier layer is the main variable in this simulation experiment. The presence of this layer was shown to modify the flow paths of electrons and holes at the gate resulting in an increase of the plasma density at the IGBT cathode [12] thereby permitting an important decrease of the on-state voltage. Using the geometry of Fig.…”

Section: δImentioning

confidence: 99%

“…XY data from numerically simulated electric field distributions serve as input to conduct this summation. Finally, Section 5 elaborates on realistic design scenarios encountered in the development of high voltage IGBTs: the analysis of cell geometry [12] and planar junction termination [13] for the same device brings out the strong interdependences and inconsistencies of various optimization goals. In the conclusion, a comparison of the new method is drawn with the two current standards for cosmic ray induced failure rate evaluation.…”

Section: Introductionmentioning

confidence: 99%

“…Conceptual illustrations of two power semiconductor structures used in the two-dimensional failure rate analysis; (a) shows a half-cell of a HiGT[12] and (b) shows a junction termination extension (JTE) structure[13].…”

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confidence: 99%

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Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices

Bauer¹

2009

Solid-State Electronics

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“…In the same manner, a corresponding data field was created from the DESSIS results and evaluated using Eq. (12). As shown in Fig.…”

Section: δImentioning

confidence: 82%

Section: Examples Based On Two-dimensional Device Simulationmentioning

confidence: 99%

Section: δImentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices

Bauer¹

2009

Solid-State Electronics

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The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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