A plasma damage resistant ultra low-k hybrid dielectric structure for 45nm node copper dual-damascene interconnects

Nakamura, Norimasa; Yoshizawa, T.; Watanabe, Toshiyuki; Miyajima, Hiromi; Nakao, Shin-ichi; Yamada, Noboru; Fujita, Koji; Matsunaga, N.; Shibata, H.

doi:10.1109/iitc.2004.1345756

Cited by 7 publications

(6 citation statements)

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“…10, the surface of the zeolite silica particle would be terminated with OH. It is thought that the zeolite silica particle has large or small OH groups The terminal velocity v is defined by v = ma 6πηr [5] In other words, the terminal velocity depends on the viscosity in the zeolite precursor. Controllability is also given to the centrifugation process condition.…”

Section: Resultsmentioning

confidence: 99%

“…In 45 nm node technology, the introduction of low-k films with k of 2.2 has been necessary in order to reduce RC delay and power dissipation. 5 For ULSI integration beyond 22 nm technology, it is necessary to further lower dielectric constant films. However, when the ultra-low-k films are applied to ULSI, many serious issues arise such as poor mechanical strength, degradation of adhesion, and plasma process induced damage.…”

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confidence: 99%

“…However, when the ultra-low-k films are applied to ULSI, many serious issues arise such as poor mechanical strength, degradation of adhesion, and plasma process induced damage. 5 As a countermeasure, a molecular-designed pure silica zeolite with pores of sub-1 nm has been proposed for low-k films. 2 A pure silica zeolite has zeolite microcrystals inside the silica film, so that the microcrystal strengthens its hardness.…”

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confidence: 99%

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Low-k Mesoporous Pure Silica Zeolite Synthesis with the Centrifugation Process of a Zeolite Precursor

Satô

Kuroki

Kayaba

et al. 2018

ECS J. Solid State Sci. Technol.

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A centrifugation process of a zeolite precursor was investigated for hydrothermal synthesis of low-k pure silica. By introducing the centrifugation process, breakdown electric fields for low-k pure silica zeolite films were improved. The pure silica zeolite precursor was fabricated by using a two-step synthesis method. The pure silica zeolite precursor was mixed with a surfactant after the centrifugation process, and then spin-coated on a Si substrate. After annealing at 400 • C in nitrogen (N 2 ), a low-k pure silica zeolite film was formed. By applying the centrifugation process, the electric breakdown electric field became larger, from 2.3 MV/cm to 3.3 MV/cm. At the centrifugation process, particles were separated by a density of OH-groups. As a result, low-k film with a high breakdown electric field of up to 4.0 MV/cm to 3.3 MV/cm and a low dielectric constant of 2.0 was obtained.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Low-k Mesoporous Pure Silica Zeolite Synthesis with the Centrifugation Process of a Zeolite Precursor

Satô

Kuroki

Kayaba

et al. 2018

ECS J. Solid State Sci. Technol.

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“…Another example to show the strong dependency on the tool/material/process capability and readiness is the across-the-wafer non-uniformity of modern CMP tools which so far seem unable to support the Hard Mask Retention scheme for the use of ULK at the trench level for the 65 nm node BEOL technologies in the manufacturing phase, although a bunch of damascene schemes have been reported [18][19][20][21][22][23][24].. Thus, discussions on possibility of implementation of ULK in the 45 nm node BEOL must be made on certain assumptions about the tool capability/readiness and limitation for manufacturing [25][26][27]. Figure 14 lists possible damascene schemes for the 45 nm node shown together with their necessary technical breakthroughs and their attainable k eff 's.…”

Section: Technical Challenges To the 45 Nm Beol Processmentioning

confidence: 95%

Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes

Nogami

Lane²,

Fukasawa

et al. 2005

SPIE Proceedings

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This paper discusses low-k/copper integration schemes which has been in production in the 90 nm node, have been developed in the 65 nm node, and should be taken in the 45 nm node. While our baseline 65 nm BEOL process has been developed by extension and simple shrinkage of our PECVD SiCOH integration which has been in production in the 90 nm node with our SiCOH film having k=3.0, the 65 nm SiCOH integration has two other options to go to extend to lower capacitance. One is to add porosity to become ultra low-k (ULK). The other is to stay with low-k SiCOH, which is modified to have a "lower-k". The effective k-value attained with the lower-k (k=2.8) SiCOH processed in the "Direct CMP" scheme is very close to that with an ULK (k=2.5) SiCOH film built with the "Hard Mask Retention" scheme. This paper first describes consideration of these two damascene schemes, whose comparison leads to the conclusion that the lower-k SiCOH integration can have more advantages in terms of process simplicity and extendibility of our 90 nm scheme under certain assumptions. Then describing the k=2.8 SiCOH film development and its successful integration, damascene schemes for 45nm nodes are discussed based on our learning from development of the lower-k 65nm scheme. Capability of modern dry etchers to define the finer patterns, nonuniformity of CMP, and susceptibility to plasma and mechanical strength and adhesion of ULK are discussed as factors to hamper the applicability of ULK.

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“…5) Many materials such as fluorinated silicon oxide (SiOF), 6) carbon doped silicon oxide (SiOCH), 7,8) spin-on methylsilisesquioxanes 9) and organic polymers 5,10) had been developed to lower the dielectric constants as a porous structures of dielectric films. Since SiOC films with relative permittivity of about 3.0 have been introduced for practical use from the 90 nm node technology, 11) the dielectrics with lower k-value of less than 2.5 has been developed actively beyond the 65 nm node technology. In the 45 nm node technology, low-k films with k <2.2 has been required in order to reduce RC delay and power dissipation.…”

Section: Introductionmentioning

confidence: 99%

Effect of TMCTS silylation treatments on crosslinking density of low-k zeolite porous silica film

Satô

Kuroki

Seino

et al. 2019

Jpn. J. Appl. Phys.

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Silylation treatment processes on pore surfaces in a pure silica zeolite (PSZ) porous low dielectric constant (low-k) film were investigated for high elastic modulus. As the silylation process, 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) treatment and ultra-violet (UV, λ = 172 nm) treatments on low-k films were investigated. The PSZ precursor was synthesized using by a two-step method. The TMCTS and UV treatments were executed several times. After three repeated processes with the TMCTS and UV treatments, the elastic modulus and relative permittivity became 11.3 GPa, and 2.4. The elastic modulus and relative permittivity were increased with 2.7 GPa and 0.08, compared to the two repeated process with TMCTS and UV treatments. Mechanism of the elastic modulus’ increase is also discussed.

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A plasma damage resistant ultra low-k hybrid dielectric structure for 45nm node copper dual-damascene interconnects

Cited by 7 publications

References 0 publications

Low-k Mesoporous Pure Silica Zeolite Synthesis with the Centrifugation Process of a Zeolite Precursor

Low-k Mesoporous Pure Silica Zeolite Synthesis with the Centrifugation Process of a Zeolite Precursor

Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes

Effect of TMCTS silylation treatments on crosslinking density of low-k zeolite porous silica film

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