A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

Abstract

Stackable select devices such as the oxide p-n junction diode and the Schottky diode (one-way switch) have been proposed for non-volatile unipolar resistive switching devices; however, bidirectional select devices (or two-way switch) need to be developed for bipolar resistive switching devices. Here we report on a fully stackable switching device that solves several problems including current density, temperature stability, cycling endurance and cycle distribution. We demonstrate that the threshold switching device based on As-Ge-Te-Si material significantly improves cycling endurance performance by reactive nitrogen deposition and nitrogen plasma hardening. Formation of the thin Si 3 N 4 glass layer by the plasma treatment retards tellurium diffusion during cycling. Scalability of threshold switching devices is measured down to 30 nm scale with extremely fast switching speed of B2 ns.

Te-based chalcogenide materials for selector applications

“…1) are clustering in a certain area on the graph and they called it a treasure map for PCM materials. In order to check if the same methodology is applicable to OTS materials, we compute the two bond orbital coordinates using the orbital radii reported by Chelikowsky and Phillips 37 for all Te-based OTS compositions that we could find reported in literature 27, 29, 38–40 , and we built a similar plot (red dots Fig. 1).…”

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

“…Alloy electrodes usually stabilize the resistive switching behavior and mainly include Cu-Ti [64], Cu-Te [65], and Pt-Al [66]. The most common nitride-based electrodes are the TiN and TaN [67,68]. The oxide-based electrodes are relatively abundant, including Al-doped ZnO [69], Ga-doped ZnO [70], and ITO [71].…”

Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

“…Organic nanocomposites have been currently receiving considerable attention for promising applications in nonvolatile memory devices due to their significant advantages including low cost and simple fabrication compared to the traditionally-used inorganic memory devices [4]. Even though there are a few hybrid inorganic/organic nanocomposites whose electrical characteristics have been investigated, inherent problems, such as slow switching speed, low density storage capability, and short retention/endurance time, which clearly interfere with their adoption in mass production, still remains problematic [5,6]. Organic nano-floating gate memories (NFGMs) have currently emerged as outstanding alternative candidates for next-generation memory devices with potential applications in flexible or stretchable charge-storage devices [7][8][9].…”