Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

Kim, Yu Na; Lee, Nam Hyun; Yun, Dong Yeol; Kim, Tae Whan

doi:10.1016/j.orgel.2015.06.028

Cited by 10 publications

(4 citation statements)

References 30 publications

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“…Copyright © 2020 Elsevier. It has been reported that due to the unique electronic and morphologic properties of reduced graphene oxide (rGO), it can efficiently capture external electrons with nonvolatile electron-trapping properties [56,57]. Therefore, researchers improved the output performance of a TENG by introducing rGO as an electron trap into the friction layer to inhibit tribological electron loss.…”

Section: Graphene and Derivatives Of Graphenementioning

confidence: 99%

Triboelectric Nanogenerators Based on 2D Materials: From Materials and Devices to Applications

Zhou

Zhang

et al. 2023

Micromachines

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Recently, there has been an increasing consumption of fossil fuels such as oil and natural gas in both industrial production and daily life. This high demand for non-renewable energy sources has prompted researchers to investigate sustainable and renewable energy alternatives. The development and production of nanogenerators provide a promising solution to address the energy crisis. Triboelectric nanogenerators, in particular, have attracted significant attention due to their portability, stability, high energy conversion efficiency, and compatibility with a wide range of materials. Triboelectric nanogenerators (TENGs) have many potential applications in various fields, such as artificial intelligence (AI) and the Internet of Things (IoT). Additionally, by virtue of their remarkable physical and chemical properties, two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), MXenes, and layered double hydroxides (LDHs), have played a crucial role in the advancement of TENGs. This review summarizes recent research progress on TENGs based on 2D materials, from materials to their practical applications, and provides suggestions and prospects for future research.

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Section: Graphene and Derivatives Of Graphenementioning

confidence: 99%

Triboelectric Nanogenerators Based on 2D Materials: From Materials and Devices to Applications

Zhou

Zhang

et al. 2023

Micromachines

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“…In the last nine years, a sustained effort has been made to synthesize composites based on polystyrene (PS) and various carbon nanoparticles, such as multi-walled carbon nanotubes [1,2], single-walled carbon nanotubes [3], fullerene [3], reduced graphene oxide [4,5], graphene oxide (GO) [6], GO functionalized with phosphor-based organic compounds [7], and sulfonated GO [8]. The interest in these composite materials was reported to be for use as flame retardants [9] and non-volatile memory devices [10]. In the case of the PS/GO composites, the following six synthesis methods were used until now: (i) suspension polymerization [11], (ii) microemulsion polymerization [12], (iii) electrostatic self-assembly [13], (iv) reversible addition fragmentation chain transfer [14], (v) in situ polymerization followed by melt process [15], and Pickering emulsion polymerization [8].…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Composites Based on Graphene Oxide and Polystyrene

et al. 2020

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In this work, new optical properties of composites based on polystyrene (PS) microspheres and graphene oxide (GO) are reported. The radical polymerization of styrene in the presence of benzoyl peroxide, pentane and GO induces the appearance of new ester groups in the PS macromolecular chains remarked through an increase in the absorbance of the infrared (IR) band at 1743 cm−1. The decrease in the GO concentration in the PS/GO composites mass from 5 wt.% to 0.5 wt.% induces a diminution in the intensities of the D and G Raman bands of GO simultaneous with a down-shift of the D band from 1351 to 1322 cm−1. These variations correlated with the covalent functionalization of the GO layers with PS. For the first time, the photoluminescent (PL) properties of PS/GO composites are reported. The PS microspheres are characterized by a PL band at 397 nm. Through increasing the GO sheets’ concentration in the PS/GO composite mass from 0.5 wt.% to 5 wt.%, a PS PL quenching process is reported. In addition, in the presence of ultraviolet A (UVA) light, a photo-degradation process of the PS/GO composite having the GO concentration equal to 5 wt.% is demonstrated by the PL studies.

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“…Organic memory devices have attracted widespread attention in recent years due to their low cost, light weight, solution processability, and mechanical flexibility characteristics. [1][2][3] The different material systems and working mechanisms used in organic memory devices can be classified into three different configurations, namely, capacitor-type, [4] resistortype, [5] and transistor-type memories. [6] Among these memory devices, transistor-type organic field-effect transistor memory (OFETM) devices have many advantages, such as single-transistor realization, [7] nondestructive readout, [8] multi-bit storage, [9,10] and compatibility with CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

Zhang

Wang

et al. 2019

Chinese Phys. B

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In this study, we present an organic field-effect transistor floating-gate memory using polysilicon (poly-Si) as a charge trapping layer. The memory device is fabricated on a N+–Si/SiO2 substrate. Poly-Si, polymethylmethacrylate, and pentacene are used as a floating-gate layer, tunneling layer, and active layer, respectively. The device shows bidirectional storage characteristics under the action of programming/erasing (P/E) operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate. The carrier mobility and switching current ratio (I on/I off ratio) of the device with a tunneling layer thickness of 85 nm are 0.01 cm 2 · V − 1 · s − 1 and 102, respectively. A large memory window of 9.28 V can be obtained under a P/E voltage of ±60 V.

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Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

Cited by 10 publications

References 30 publications

Triboelectric Nanogenerators Based on 2D Materials: From Materials and Devices to Applications

Triboelectric Nanogenerators Based on 2D Materials: From Materials and Devices to Applications

Optical Properties of Composites Based on Graphene Oxide and Polystyrene

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

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