A poly(fluorene-thiophene) donor with a tethered phenanthro[9,10-d]imidazole acceptor for flexible nonvolatile flash resistive memory devices

Wu, Hung‐Chin; Yu, An-Dih; Lee, Wen‐Ya; Chen, Wen‐Chang

doi:10.1039/c2cc34257j

Cited by 76 publications

(37 citation statements)

References 25 publications

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“…Previously, several types of flexible nonvolatile memory such as flexible flash memory1314151617, flexible ferroelectric memory1819 and flexible resistive memory20212223242526272829303132333435363738 have been demonstrated. In these previous flexible nonvolatile memories, the smallest radius into which the memory devices can be bent has been limited to several millimeters due to the strain-induced degradation of memory properties40.…”

mentioning

confidence: 99%

Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

Nagashima

Koga

Celano

et al. 2014

Sci Rep

129

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On the development of flexible electronics, a highly flexible nonvolatile memory, which is an important circuit component for the portability, is necessary. However, the flexibility of existing nonvolatile memory has been limited, e.g. the smallest radius into which can be bent has been millimeters range, due to the difficulty in maintaining memory properties while bending. Here we propose the ultra flexible resistive nonvolatile memory using Ag-decorated cellulose nanofiber paper (CNP). The Ag-decorated CNP devices showed the stable nonvolatile memory effects with 6 orders of ON/OFF resistance ratio and the small standard deviation of switching voltage distribution. The memory performance of CNP devices can be maintained without any degradation when being bent down to the radius of 350 μm, which is the smallest value compared to those of existing any flexible nonvolatile memories. Thus the present device using abundant and mechanically flexible CNP offers a highly flexible nonvolatile memory for portable flexible electronics.

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mentioning

confidence: 99%

Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

Nagashima

Koga

Celano

et al. 2014

Sci Rep

129

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“…In particular, high-performance flexible non-volatile memories based on various data storage principles such as resistive type [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] , flash 4,[25][26][27][28][29] and ferroelectric [30][31][32][33][34][35][36][37][38][39][40] hold great promise in a variety of emerging applications ranging from mobile computing to information management and communication. While the recent advances in this area are impressive, novel organic materials and electronic device structures that can be tightly rolled, crumpled, stretched, sharply folded and unfolded repeatedly without any performance degradation still need to be developed.…”

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confidence: 99%

Non-volatile organic memory with sub-millimetre bending radius

et al. 2014

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High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p-and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-cotrifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of 46,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 mm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

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“…[9][10][11][12][13][14] Additionally,the RRAM devices can be fabricated in av ertically stacked multilayer structure that is effective to reduce the devices ize and largely increaset he storage density. [15] To date, variousm aterials such as chalcogenides, [16,17] inorganic oxides, [18][19][20][21][22][23] conjugated polymers, [24,25] and organic molecules [26,27] have been proved to possess resistive switching memory behaviors. Amongt hese materials, organic RRAM has been the most promising because of its intrinsic advantagesi ncluding low-temperature processing, printability, and large scalability.…”

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confidence: 99%

Ternary Flexible Electro‐resistive Memory Device based on Small Molecules

Zhang

Zhuang

et al. 2016

Chemistry An Asian Journal

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Flexible memory devices have continued to attract more attention due to the increasing requirement for miniaturization, flexibility, and portability for further electronic applications. However, all reported flexible memory devices have binary memory characteristics, which cannot meet the demand of ever-growing information explosion. Organic resistive switching random access memory (RRAM) has plenty of advantages such as simple structure, facile processing, low power consumption, high packaging density, as well as the ability to store multiple states per bit (multilevel). In this study, we report a small molecule-based flexible ternary memory device for the first time. The flexible device maintains its ternary memory behavior under different bending conditions and within 500 bending cycles. The length of the alkyl chains in the molecular backbone play a significant role in molecular stacking, thus guaranteeing satisfactory memory and mechanical properties.

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A poly(fluorene-thiophene) donor with a tethered phenanthro[9,10-d]imidazole acceptor for flexible nonvolatile flash resistive memory devices

Cited by 76 publications

References 25 publications

Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

Non-volatile organic memory with sub-millimetre bending radius

Ternary Flexible Electro‐resistive Memory Device based on Small Molecules

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