A positive test of the LCAO theory of heterojunctions: Microscopic measurements of band discontinuities at CdS–Ge and InP–Ge interfaces

Katnani, A. D.; Daniels, R. R.; Zhao, Te‐Xiu; Margaritondo, G.

doi:10.1116/1.571621

Cited by 9 publications

(3 citation statements)

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“…Unfortunately, one cannot easily follow the band-bending changes by monitoring the Figure 14.7 A practical case of band-bending effects during the formation of a heterojunction interface. [11]. This reflects the band-bending evolution on the CdS side.…”

Section: An Alternate General Methods To Measure Band Discontinuitiesmentioning

confidence: 78%

“…Second, the devices to focus X-rays Figure 14.13 During the InPeGe interface formation process, the In4d photoemission peak is both shifted in energy and deformed. [11]. (Data derived from Ref.…”

Section: Photoemission Spectromicroscopymentioning

confidence: 99%

“…11 Angle-resolved photoemission and band-structure mapping. (a) With a small-area detector, one can measure both the energy and the direction of the photoelectrons; in turn, these parameters entirely define the k-vector and therefore the state of each photoelectron in vacuum, and can be used to evaluate the corresponding parameters for the ground-state electron in the sample.…”

mentioning

confidence: 99%

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The Role of Photoemission Spectroscopies in Heterojunction Research

Margaritondo

2013

Characterization of Semiconductor Heterostructures and Nanostructures

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Section: An Alternate General Methods To Measure Band Discontinuitiesmentioning

confidence: 78%

Section: Photoemission Spectromicroscopymentioning

confidence: 99%

mentioning

confidence: 99%

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The Role of Photoemission Spectroscopies in Heterojunction Research

Margaritondo

2013

Characterization of Semiconductor Heterostructures and Nanostructures

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Fluctuation‐induced broadening of exciton reflection spectra in A^II B^VI solid solutions

Ablyazov

Akeshkin

Melekhin

et al. 1986

Physica Status Solidi (b)

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The validity of different fluctuation models for an explanation of the concentration dependence of exciton reflection line broadening in AIIBvI solid solutions is discussed on the example of Zn,Cdl-,S, Zn,Cdl-,Te, and ZnS,Sel-, systems. It is shown that the concentration dependence can be explained with the help of models describing the interaction of excitons with largescale fluctuations of solid solution composition. At small concentrations of one component of solid solution the model of localization of the exciton as a whole by a fluctuation potential can be used. I n the range of comparable concentrations of components there can be applied models accounting for the interaction of only the hole, or only the electron with the fluctuation potential, depending on whether there is anion or cation substitution.Am Beispiel der Zn,Cdl -,S-, Zn,Cdl -,Tc-und ZnS,Sel -,-Systeme wird die Giiltigkeit verschiedener Fluktuationsmodelle zur Erklarung der Konzentrationsabhangigkeit der Verbreiterung der Exzitonenreflexionslinien in AIIBVI-Mischkristallen diskutiert. Es wird gezeigt, daI3 die Konzentrationsabhangigkeit mit Modcllen erklart werden kann, die die Wechselwirkung von Exzitonen mit makroskopischen Fluktuationen der Mischkristallzusammensetzung beschreiben. Bei geringen Konzentrationen der einen Komponente des Mischkristalls kann das Model1 der Gesamtlokalisierung des Exzitons durch das Fluktuationspotential benutzt werden. Im Bereich vergleichbarer Konzentrationen der Komponenten konnen Modelle benutzt werden, die die Wechselwirkung des Loches diein, oder des Elektrons allein mit dem Fluktuationspotential in Abhangigkeit davon beschrciben, ob das Anion oder Kation substituiert ist.

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Heterojunction band discontinuity control by ultrathin intralayers

Niles

Margaritondo

Perfetti

et al. 1988

Electronic Structure of Semiconductor Heterojunctions

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A positive test of the LCAO theory of heterojunctions: Microscopic measurements of band discontinuities at CdS–Ge and InP–Ge interfaces

Cited by 9 publications

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The Role of Photoemission Spectroscopies in Heterojunction Research

The Role of Photoemission Spectroscopies in Heterojunction Research

Fluctuation‐induced broadening of exciton reflection spectra in A^II B^VI solid solutions

Heterojunction band discontinuity control by ultrathin intralayers

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A positive test of the LCAO theory of heterojunctions: Microscopic measurements of band discontinuities at CdS–Ge and InP–Ge interfaces

Cited by 9 publications

References 0 publications

The Role of Photoemission Spectroscopies in Heterojunction Research

The Role of Photoemission Spectroscopies in Heterojunction Research

Fluctuation‐induced broadening of exciton reflection spectra in AII BVI solid solutions

Heterojunction band discontinuity control by ultrathin intralayers

Contact Info

Product

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Fluctuation‐induced broadening of exciton reflection spectra in A^II B^VI solid solutions