A process simplification scheme for fabricating self-aligned silicided trench-gate power MOSFETs

Juang, Miin‐Horng; Sun, Lei; Chen, W.T; Ou-Yang, C.I

doi:10.1016/s0038-1101(00)00246-x

Cited by 4 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The self-aligned silicide (salicide) process is used to form a silicided trench-gate power MOSFET [11]. Figure 1 shows the primary fabrication process flow for the power MOSFET with the SiGe channel region.…”

Section: Device Fabricationmentioning

confidence: 99%

“…Moreover, further reduction in the specific on-resistance and increase of the channel density are the primary goals for this type of power MOSFET, when an acceptable blocking voltage is still obtained. A fully self-aligned trench-gate MOSFET technology that permits a significant increase in the packing density was previously developed [11]. In addition, a device scheme with the dual-doped body region was also proposed for further reduction in the specific on-state resistance [12].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The formation of trench-gate power MOSFETs with a SiGe channel region

Juang¹,

Chueh²,

Jang³

2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The fabrication of trench-gate power MOSFETs with a SiGe channel region has been proposed to further improve the device performance. A larger Ge mole fraction of Si 1−x Ge x may cause a smaller on-state resistance but more degradation of the blocking voltage. A proper Ge mole fraction of 0.2 may be available, implementing a device with a blocking voltage of 30 V and a specific on-state resistance of about 0.70 cm. On the other hand, a gradually changed Ge mole fraction of the Si 1−x Ge x channel region may be employed to enhance the electric field in the channel region, and a specific on-state resistance of about 0.68 cm can be achieved. Moreover, for this device with a SiGe channel region, a thin n-SiGe layer may be used in the drain near the channel region. This scheme can even yield a specific on-state resistance of only about 0.66 cm which is 10% smaller than that caused by a conventional Si-channel device with the same process parameters.

show abstract

Section: Device Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The formation of trench-gate power MOSFETs with a SiGe channel region

Juang¹,

Chueh²,

Jang³

2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The silicon MOSFET has become the dominant device technology for these applications. Due to its many attractive features, there has been a concerted effort to optimize its structure, design, and process technology [2][3][4][5][6][7][8][9][10]. For instance, it has high input impedance due to its metal-oxide-semiconductor gate structure.…”

Section: Introductionmentioning

confidence: 99%

“…Even greater reduction in the specific on-resistance has been achieved by utilizing trench structures [5][6][7][8][9]. However, the blocking voltage may be would be limited by the high electric field near the trench corner.…”

Section: Introductionmentioning

confidence: 99%