Fabrication of trench-gate power MOSFETs by using a dual doped body region

Juang, Miin‐Horng; Chen, W. T.; Ou-Yang, C.I; Jang, Sheng‐Lyang; Lin, Mengyan; Cheng, Huang–Chung

doi:10.1016/j.sse.2003.07.007

Cited by 15 publications

(11 citation statements)

References 8 publications

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“…MOSFETs are known to have lower on-state resistances (R DSON ) than vertical DMOS devices because higher channel densities can be achieved [19][20][21][22][23][24]. However, gate oxide layers thermally grown along the trench walls increase the susceptibility of the gate dielectric in trench MOSFETs to HCI since there is more exposure to the channel current compared with the gate dielectrics in vertical DMOS devices [1].…”

Section: Introductionmentioning

confidence: 99%

The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

Alatise

Kennedy

Petkos

et al. 2010

IEEE Trans. Electron Devices

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Section: Introductionmentioning

confidence: 99%

The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

Alatise

Kennedy

Petkos

et al. 2010

IEEE Trans. Electron Devices

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“…2. First, by using the conventional processing sequence of a trench MOSFET [11]- [13], we create the structure as shown in Fig. 2(a).…”

Section: Device Structure and Proposedmentioning

confidence: 99%

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

Saxena

Kumar

2009

IEEE Trans. Electron Devices

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In this brief, we propose a new stepped oxide heteromaterial trench power MOSFET with three sections in the trench gate (an N + poly gate sandwiched between two P + poly gates) and having different gate oxide thicknesses (increasing from source side to drain side). The different gate oxide thickness serves the purpose of simultaneously achieving the following: 1) a good gate control on the channel charge and 2) a lesser gate-to-drain capacitance. As a result, we obtain higher transconductance as well as reduced switching delays, making the proposed device suitable for both RF amplification and high-speed switching applications. In addition, the sandwiched gate with different work-function gate materials modifies the electric field profile in the channel, resulting in an improved breakdown voltage. By using 2-D simulations, we have shown that the proposed device structure exhibits about 32% enhancement in breakdown voltage, 25% reduction in switching delays, 20% enhancement in peak transconductance, and 10% reduction in figure of merit (product of ON-resistance and gate charge) as compared to the conventional trench-gate MOSFET.

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“…The proposed fabrication procedure of the SCT structure is similar to the methods used to fabricate the conventional trench gate MOSFET till some initial steps [4,6,8,12,14,15]. We then filled with the deposited sacrificial oxide.…”

Section: Device Structure and Proposed Fabrication Proceduresmentioning

confidence: 99%

A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

Saxena

Kumar

2008

IEEE Trans. Electron Devices

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In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si 1-x Ge x body with a compositionally graded Si 1-x Ge x buffer in the drift region enables us to create strain in the channel along with graded strain in the accumulation region. As a result, the proposed structure exhibits 40% enhancement in current drivability, 28% reduction in the on-resistance and 72% improvement in peak transconductance at the cost of only 12% reduction in the breakdown voltage when compared to the conventional trench gate MOSFET. Furthermore, the graded strained accumulation region supports the confinement of carriers near the trench sidewalls improving the field distribution in the mesa structure useful for a better damage immunity during inductive switching.

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Fabrication of trench-gate power MOSFETs by using a dual doped body region

Cited by 15 publications

References 8 publications

The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

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