A proportional hazards approach to correlate SiO/sub 2/-breakdown voltage and time distributions

Chan, C.K.

doi:10.1109/24.55873

Cited by 26 publications

(11 citation statements)

References 8 publications

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“…They include random coefficients models ( [15]) and stochastic process models ( [6]) to name a few. Finally, progressive-stress loading is often used for reliability evaluation of a certain type of capacitors or integrated circuits ( [5]). A fruitful area of future research includes developing progressive-stress ADT plans and comparing their performances with those of step-stress and constant-stress ADT plans.…”

Section: Discussionmentioning

confidence: 99%

Optimal Design of Step-Stress Degradation Tests in the Case of Destructive Measurement

Park

Yum

Balamurali

2004

Quality Technology & Quantitative Management

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In this article, optimal accelerated degradation test plans under step-stress loading (step-ADT plans) are developed under the assumptions of destructive testing, a simple constant-rate relationship between the stress and the performance of a unit, and a cumulative exposure model for the effect of changing stress levels. As an optimization criterion, the asymptotic variance of the maximum likelihood estimator of the th quantile of the lifetime distribution at the use condition is adopted, and the stress levels, the proportion of units measured at each test point, and the stress changing time are optimally determined. Sensitivity analysis and sample size determination procedures are also illustrated with an example. Finally, the optimal step-ADT plan is compared with the corresponding optimal ADT plan under constant-stress loading in terms of statistical efficiency and the total amount of testing time. Computational results indicate that the proposed step-ADT plan is more economical in terms of testing time if only one test equipment can be employed. q

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Section: Discussionmentioning

confidence: 99%

Optimal Design of Step-Stress Degradation Tests in the Case of Destructive Measurement

Park

Yum

Balamurali

2004

Quality Technology & Quantitative Management

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“…The statistics of breakdown in insulators have been studied extensively [182-184, 187-189, 719-724] with specific emphasis placed by the semiconductor industry on silicon oxide [8, 48-50, 52, 93, 88, 173, 218, 221, 222, 541, 690, 691, 697, 698, 725-747]. The first breakdown event and the final dielectric breakdown event follow the same statistical distribution and have been associated with the same physical processes [8,83,88,93,173,698,731,733]. The random nature of the breakdown process and its dependence on local atomic structure has led to the concept of multi-modal distributions, with one branch of the TDDB distribution being referred to as the "intrinsic" breakdowns and one or more branches being referred to as "extrinsic" breakdowns [738,[749][750][751].…”

Section: Statistics Of Wearout and Breakdownmentioning

confidence: 98%

Oxide Wearout, Breakdown, and Reliability

Dumin

2002

Oxide Reliability

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Section: Statistics Of Wearout and Breakdownmentioning

confidence: 99%

Oxide Wearout, Breakdown, and Reliability

Dumin

2001

Int. J. Hi. Spe. Ele. Syst.

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The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxides manufactured today, and to other solid insulators, as well. Both hard and soft breakdowns were included in this model and will be discussed here. The importance of stressinduced-leakage-currents (SILCs) and direct tunneling currents will be discussed in the context of device applications, thinner oxides, and oxide reliability. The diminishing importance of breakdown in ultra thin oxides in ultra small devices will be contrasted with the increasing importance of oxide leakage currents. Trap generation is important in the triggering of breakdown and in the formation of SILCs. Trap generation will be discussed in some detail. Various statistical formulations of oxide breakdown, and how these distributions are related to trap generation, will be discussed. All of these effects will be related to oxide reliability and oxide integrity. An extensive bibliography has been included to help the reader obtain more detailed information concerning the concepts being discussed. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Oxide Wearout, Breakdown, and Reliability 619found in an early review paper [20]. This wearout/breakdown model will be referred to as the "Klein/Solomon" model below when comparisons with modern works are needed.The Klein/Solomon model has been refined and confirmed continuously from the 1970s through the present time [10,20,. The extent of the damage is determined both by the 1/2 CV 2 energy stored in the capacitor and by the rate at which this energy discharges through the local hot spot [10,20,75,82,83,88,92,93,96,[100][101][102]. The local hot spot is often accompanied by light emission, in many cases incandescence [8-10, 103-115]. Several techniques have been developed for using the damage introduced during the breakdown to study the breakdown process [80,[116][117][118][119][120][121][122][123][124]. During the breakdown event, the stored energy in the capacitor, 1/2 CV 2 , partially discharges through the breakdown region in a time limited by the impedance of the total measurement system [8][9][10][82][83][84][85].The local breakdowns are intimately coupled to the trap generation and various trap generation models will be discussed in a separate section.During the breakdowns described by Klein/Solomon, one of two scenarios is possible during and following a breakdown discharge. Which scenario takes place depends on the oxide thickness, the oxide area, the magnitude of the stored energy, the ...

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A proportional hazards approach to correlate SiO/sub 2/-breakdown voltage and time distributions

Cited by 26 publications

References 8 publications

Optimal Design of Step-Stress Degradation Tests in the Case of Destructive Measurement

Optimal Design of Step-Stress Degradation Tests in the Case of Destructive Measurement

Oxide Wearout, Breakdown, and Reliability

Oxide Wearout, Breakdown, and Reliability

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