A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier with 35.9 dBm / 32.3 dBm Output Power at 56 % / 44 % PAE in Low/High-Band

Sogl, B.; Bakalski, W.; Zannoth, M.; Asam, M.; Kapfelsperger, B.; Berkner, J.; Eisener, B.; Osterreicher, W.; Rampf, E.; Scholtz, Arpad L.; Klepser, B.-U.

doi:10.1109/bipol.2007.4351846

Cited by 2 publications

(2 citation statements)

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“…Because of the low breakdown voltages for fast CMOS devices, other technologies, such as GaAs HBT [26], [27], Si bipolar [28], [29], SiGe HBT [30]- [32], and low-voltage LDMOS [33], [34], have so far dominated the small-size PAs. See [35] for CMOS vs. GaAs comparison for mobile phone PAs, and [36] for comparison of different bipolar technologies for similar applications.…”

Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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“…This stage is typically designed to operate in class E switching mode for further PAE enhancement [11]. For SiGe HBT or GaAs GSM PAs, the third-stage device must be robust enough to handle high voltage swings arising from the high power level and high voltage standing wave radio (VSWR) at the output [12], [13]. Figure 4 [12] illustrates a die layout that integrates the PA stages and the control circuits of a SiGe HBT PA. A silicon-CMOS GSM PA, on the other hand, requires different design approaches to overcome the low breakdown voltage issue associated with the device itself.…”

Section: Pas Operating In Different Classes Have Different Trade-offsmentioning

confidence: 99%