A quantitative model for an interaction between extended dislocation loops and impurities in Czochralski silicon based upon the photoluminescence analysis

Wijaranakula, W.

doi:10.1063/1.349332

Cited by 14 publications

(5 citation statements)

References 14 publications

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“…Wijaranakula has performed a systematic study of the oxygen precipitation behavior in Sn-and C-doped p-type CZ silicon in the temperature range 400-900°C. 7,16,17 The results are summarized in Fig. 3a and b, representing the loss of interstitial oxygen as determined by FTIR after a single-step isochronal anneal for 100 h in a nitrogen atmosphere and the bulk defect density after preferential etching of samples which underwent a 100 h nucleation anneal in N 2 at the indicated temperature followed by a fixed growth step at 1050°C for 50 h, respectively.…”

Section: Impact Of Tin On the Diffusion And Aggregation Of Oxygenmentioning

confidence: 99%

“…In the latter case, a detection limit of ϳ1.8 ϫ 10 16 atom/cm 3 for the 120 Sn isotope is quoted in the literature. 7 That Sn is at the same time isoelectronic and a selective vacancy trap is interesting from a perspective of impurity-diffusion 8 and aggregation studies. First, the impact of the Fermi level or Coulombic interactions on impurity pairing can be studied by comparing Sn-free with Sn-doped material; in the latter case, only elastic interactions play a role.…”

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confidence: 99%

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Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Claeys

Simoen

Neimash

et al. 2001

J. Electrochem. Soc.

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This paper reviews the impact of doping silicon with substitutional tin impurities on the formation of intrinsic and extrinsic lattice defects. The two major topics covered are ͑i͒ the effect on the diffusivity and aggregation/precipitation of interstitial oxygen in Czochralski ͑CZ͒ silicon and ͑ii͒ the formation of stable radiation defects in irradiated Sn-doped material. As demonstrated, the compressive stress associated with incorporating a large Sn atom on a lattice site is the basic feature governing the interactions with point defects. Consequently, Sn acts as a selective vacancy trap, while, in contrast, not affecting interstitial reactions. This leads to a reduced formation of oxygen thermal donors in n-type Si and lowers the concentration of vacancy-oxygen and divacancy centers in irradiated material. Enhanced oxygen precipitation has been noted around 750°C in p-type CZ silicon. Furthermore, specific Sn-related radiation defects are introduced, which question the use of doping with tin as a technique for substrate hardening.

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Section: Impact Of Tin On the Diffusion And Aggregation Of Oxygenmentioning

confidence: 99%

mentioning

confidence: 99%

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Claeys

Simoen

Neimash

et al. 2001

J. Electrochem. Soc.

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“…It was reported that the D1 and D2 lines originate from edge and screw dislocations, respectively. [19][20][21] The two lines were merged into the D a1 band at room temperature. 9) This supports the idea that the D a1 band has two kinds of polarization properties corresponding to the tilt and twist structures of SA-GBs.…”

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confidence: 99%

Polarized photoluminescence imaging analysis around small-angle grain boundaries in multicrystalline silicon wafers for solar cells

Kato¹,

Tajima²,

Toyota³

et al. 2014

Jpn. J. Appl. Phys.

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We have shown the effectiveness of polarized photoluminescence imaging for analyzing the structural and spectroscopic properties of small-angle grain boundaries (SA-GBs) in multicrystalline Si. The dislocation-related deep-level emission band at approximately 0.79 eV at room temperature was found to be polarized, whereas the band-edge emission did not show the polarization effect. The anisotropy of the 0.79 eV band was classified into two groups depending on the tilt and twist characteristics of SA-GBs determined by the electron backscatter diffraction measurement.

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“…Furthermore, it has been determined that Sn improves [77] the minority carrier lifetime in Fe-contaminated Si, influences [78] the recombination characteristics of γ-irradiated Si, and accelerates [79] the degradation conductivity of electron irradiated Si. Sn doping has also been used to monitor [80] the interaction between extended dislocation loops and impurities in Cz-Si. It affects the diffusion of oxygen, as well as the formation of thermal donors and oxygen precipitates in Si [39,74,[81][82][83].…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

et al. 2022

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Crystalline silicon (Si) is the key material of the semiconductor industry, with significant applications for electronic and microelectronic devices. The properties of Si are affected by impurities and defects introduced into the material either during growth and/or material processing. Oxygen (O) and carbon (C) are the main impurities incorporated into the crystal lattice during growth via the Czochralski method. Both impurities are electrically neutral, however, implantations/irradiations of Si lead to the formation of a variety of oxygen-related and carbon-related defects which introduce deep levels in the forbidden gap, inducing generally detrimental effects. Therefore, to control Si behavior for certain applications, it is important to have an understanding of the properties and fundamental processes related with the presence of these defects. To improve Si, isovalent doping during growth must be employed. Isovalent doping is an important defect-engineering strategy, particularly for radiation defects in Si. In the present review, we mainly focus on the impact of isovalent doping on the properties and behavior of oxygen-related and carbon-related defects in electron-irradiated Si. Recent experimental results from infrared spectroscopy (IR) measurements coupled with theoretical studies involving density functional theory (DFT) calculations, are discussed. Conclusions are reached regarding the role of isovalent doping (carbon, (C), germanium (Ge), tin (Sn), and lead (Pb)) on the suppression of detrimental effects introduced into Si from technologically harmful radiation clusters induced in the course of material processing.

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A quantitative model for an interaction between extended dislocation loops and impurities in Czochralski silicon based upon the photoluminescence analysis

Cited by 14 publications

References 14 publications

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Polarized photoluminescence imaging analysis around small-angle grain boundaries in multicrystalline silicon wafers for solar cells

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

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