A Quasi-Planar Thin Film Field Emission Diode

Abstract

A novel quasi-planar thin-film field emitter is fabricated utilizing thin-film deposition and wet etching processes. The spacing between the emitter and collector could be well controlled via the thickness of Cr layers, which creates sub-micron gap. A forming process causes an increased surface roughness of emitters and results in a higher field enhancement factor, which shows better field emission characteristics. The turn-on voltage (at which the current level is 100 nA) of the device with the Cr thickness of 300 nm is as low as 12 V.

Improved Field Emission Characteristics with Different Electrode Materials by Forming Process in a Quasi-Planar Thin Film Field Emission Diode

“…Figure 1 shows the schematic diagram of the fabrication procedure of a quasi-planar field emission diode [13]. In the beginning, wet oxide (200 nm), amorphous silicon (150nm) and TEOS oxide (500 nm) were sequentially deposited on the (100) p-type wafer by furnace (Fig.…”