A reliable contact for insulated gate effect integrated circuits

Dudley, R.H.; Labuda, E. F.

doi:10.1109/iedm.1969.188180

Cited by 2 publications

(5 citation statements)

References 2 publications

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“…Although they are superior in most other respects, the samples with electron beam evaporated aluminum contacts, show large and erratic shifts in flatband voltage. This can be attributed to latent damage (14) from the soft x-rays associated with electron impact on the target. Though the x-radiation effects appear to be totally removed by the low-temperature hydrogen anneal, the application of negative bias, temperature stress leads to a "slow trapping" type of instability.…”

Section: Summary Of Resultsmentioning

confidence: 99%

“…In this connection it is of interest to establish log PF2 --1/T ranges (7,8) beyond which positive hole and/or excess electron conduction achieves a magnitude equal to or greater than about 1% of the total (ionic plus electronic) conductivity. On the basis of Wagner's theory (9)(10)(11) of mixed conduction, many experimental measurement schemes may be devised to shed light on this matter--chief among these are: a-c (total) conductivity determinations (11)(12)(13) fluorine activity and temperature), open circuit emf measurements (14,15) and d-c polarization measurements (13,(16)(17)(18). "Coulometric titration" variations of the polarization technique have also been developed more recently (19)(20)(21).…”

Section: Discussionmentioning

confidence: 99%

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On the Formation of Surface States during Stress Aging of Thermal Si-SiO[sub 2] Interfaces

Goetzberger

Prades²,

Strain³

1973

J. Electrochem. Soc.

108

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Under combined bias and temperature stress, the silicon‐silicon dioxide interface is altered by the introduction of more surface states. This effect has been investigated in metal‐oxide‐semiconductor structures formed by a variety of oxidizing, annealing and metalizing procedures. In most cases, stress of 106 V/cm at 300°C caused a surface‐state peak to appear in the lower half of the bandgap. The surface‐state vs. energy curves vary with the oxidation conditions, but they are reproducible when sample preparation is reproduced. The influence of the following parameters was investigated: dry oxygen and steam oxidation, Cr‐Au and Al contacts, e‐gun and filament evaporation and post‐metalization annealing. The surface‐state density increases linearly with applied field, and it increases in proportion to the logarithm of time. The nature of the distribution also depends on the annealing procedures, and on the contact metal.

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Section: Summary Of Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

On the Formation of Surface States during Stress Aging of Thermal Si-SiO[sub 2] Interfaces

Goetzberger

Prades²,

Strain³

1973

J. Electrochem. Soc.

108

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“…Equation [3] can be rewritten in terms of electric field (13) in the alumina layer, and for xP << KA simplifies to XAxpEA AVFB _ _ [4] KA Equation [4] predicts that with constant electric field in the alumina, nVFB increases directly with the alumina thickness and is independent of SiO2 thickness. Both of these variations were observed experimentally with A1203 thicknesses ranging between 500 and 2400A, and SiO2 thicknesses between 1000 and 4000A.…”

Section: Resultsmentioning

confidence: 99%

“…A low threshold voltage p-channel MIS (metalinsulator-semiconductor) technology in which a double dielectric sandwich of 1000A of SiO2 and 500A of A120~ is used as the gate insulator (1,2) has received considerable interest in the past. Devices made with this gate structure and a Ti-Pd-Au metallization (3,4) have a nominal threshold voltage of --1.0V if a 10 ohm-cm, <100>, n-type silicon substrate is used.…”

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confidence: 99%

“…The subject has been investigated for steam and dry oxygen oxidation for the cases of initially uniform boron concentration (1), predeposition from a B~O8 source (2), and predeposition from a boron nitride source (3). Diffusion from implanted, preannealed sources has been recently investigated for oxidation in a "purified argon" atmosphere (4). Oxide thicknesses…”

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confidence: 99%

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Polarization and Charge Motion in Metal-Al[sub 2]O[sub 3]-SiO[sub 2]-Si Structures

Gnädinger¹,

Rosenzweig²

1974

J. Electrochem. Soc.

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An investigation of the flatband voltage shifts of double insulator (A1203-SiO2) MIS capacitors under bias temperature stress has been performed in order to assess and characterize the stability of double insulator IGFET's. These shifts were opposite to the applied bias voltage ("ionic" direction), and it was found that they are composed of two components: (a) A "fast" component which is linear with gate bias voltage and symmetric with bias polarity. Most of the shift occurs in less than 1 rain at all temperatures used in this work (65~176 Its magnitude is temperature activated (0.15 eV). This part of the flatband voltage shift is explained by a bulk polarization of the A1203 layer with a polarizability that is independent of A1203 thickness. (b) A "slow" component which is observed under positive bias. It is characterized by a linear dependence of flatband voltage shift on the logarithm of stress time for times larger than a delay time, which is thermally activated (1.2 eV). This component is interpreted to be due to motion of mobile, ionic charge, such as sodium, across the A1203 and SiO2 layers. This charge motion is greatly reduced by increasing the A1203 thickness.A low threshold voltage p-channel MIS (metalinsulator-semiconductor) technology in which a double dielectric sandwich of 1000A of SiO2 and 500A of A120~ is used as the gate insulator (1,2) has received considerable interest in the past. Devices made with this gate structure and a Ti-Pd-Au metallization (3, 4) have a nominal threshold voltage of --1.0V if a 10 ohm-cm, <100>, n-type silicon substrate is used.One of the advantages of this technology is the excellent threshold voltage control and the inherently good stability of the threshold voltage under bias-temperature (BT) stress conditions.A discussion of control of the initial threshold voltage is given by Clemens and Labuda (5). The question whether the inherently stable devices show any residual threshold voltage shifts during their operating life has been treated by Lampi and Labuda (6) who performed a reliability study by bias temperature aging discrete MIS transistors. They found that under negative gate bias two apparently independent types of drifts can cause small threshold voltage shifts. One is a rapid drift which shifts the threshold voltage to more positive values, and the other one is a long term drift which shifts the threshold voltage to more negative values. The latter type, referred to as "slow trapping," was shown because of its large activation energy to be negligible at normal operating temperatures and biases and can be neglected for most applications. The first type is potentially more important because it occurs at lower temperatures and in shorter times. On the basis of experimental evidence it can be interpreted to be due to polarization of the A1203 layer and charge motion across the insulator structure (7). The purpose of this work is to investigate and characterize this rapid initial threshold voltage shift for both negative and positive bias and to evaluate its effec...

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A reliable contact for insulated gate effect integrated circuits

Cited by 2 publications

References 2 publications

On the Formation of Surface States during Stress Aging of Thermal Si-SiO[sub 2] Interfaces

On the Formation of Surface States during Stress Aging of Thermal Si-SiO[sub 2] Interfaces

Polarization and Charge Motion in Metal-Al[sub 2]O[sub 3]-SiO[sub 2]-Si Structures

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