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A new eledronic camera tube has been developed jor

The leakage current can further be minimized if the radius of curvature contact is grown epitaxially at high temperature, diffusion will take place and increase the radius of curvature.This scheme is used for contacts in experimental n-channel MOS transisohm-cm 2 ohm-cm was deposited at 1250°C to a thickness of 1 micron. The tors. The p-type substrate is 10 ohm-cm. Epitaxial silicon varying from 0.25 contact thus constructed has resulted in very low leakage current. Insulated gate field effect integrated circuits are economically attractive because of the number of functions possible per unit area and the relative simplicity of design and processing. In many applications, insulated gate fie1,d effec't transistors (IGFET) with low (-1 volt) and stable threshold