A resonant-cap power combiner for two-terminal millimeter-wave devices

Bauer, Tobias; Freyer, J.; Claassen, Manfred

doi:10.1109/22.552047

Cited by 5 publications

(3 citation statements)

References 12 publications

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“…For example, pulsed mode operation is possible with a pulse width of 1000 ns and a repetition frequency of 100 Hz. A straightforward calculation shows that such pulsed mode operations would result in an average power dissipation of 1100 W cm −2 if the IMPATT diode were operated at the peak power of 11 W. Because CW operation of GaAs microwave diodes have experimentally demonstrated the ability to dissipate 1700 W cm −2 [18], the dissipated power of 1100 W cm −2 in 4H-SiC, which has a wider bandgap and a better thermal conductivity, can be reasonably assumed to be manageable. It should be noted that the departure of f from the optimal generation frequency and the average current increase can result in modulated output voltages across the load resistor.…”

Section: Resultsmentioning

confidence: 99%

Monte Carlo simulation of 4H-SiC IMPATT diodes

Zhao

Gruz̆inskis

Luo

et al. 2000

Semicond. Sci. Technol.

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A Monte Carlo particle (MCP) bipolar model for 4H-SiC consisting of three electron and two hole bands is developed to simulate the millimetre wave power generation by 4H-SiC IMPATT diodes. Validation of the model is provided by comparing (i) carrier transport properties with full band simulation results and (ii) hole impact ionization coefficients with the most recent experimental results. MCP simulation results are reported for a low-voltage 4H-SiC IMPATT diode connected directly in a parallel resonant circuit with a standard 50 load resistor. The detailed evolution of carrier generation, accumulation and drift are presented to confirm the design of an efficient hi-lo IMPATT diode structure. Critical performance parameters investigated include bias and frequency dependences of millimetre wave output power, generation efficiency, conduction current and frequency stability at an operating frequency around 200 GHz. It is predicted that very high-power millimetre waves at around 200 GHz can be generated at pulse mode.

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Section: Resultsmentioning

confidence: 99%

Monte Carlo simulation of 4H-SiC IMPATT diodes

Zhao

Gruz̆inskis

Luo

et al. 2000

Semicond. Sci. Technol.

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“…The power dissipation for these thresholds is about 3 and 2.6 MW cm −2 at 300 and 600 K, respectively. It has been shown that GaAs generators can operate in the CW mode regime with dissipated power densities up to 0.5 MW cm −2 [19]. Despite the 2.6 times higher thermal conductivity of GaN in comparison with that of GaAs, CW mode operation of the proposed GaN TED might not be feasible due to its high energy dissipation.…”

Section: Notched Zincblende Gan Tedsmentioning

confidence: 99%

Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique

Gruz̆inskis

Shiktorov

Starikov

et al. 2001

Semicond. Sci. Technol.

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Electron transport and microwave power generation in the 200-300 GHz frequency range by n + -n − -n-n + zincblende GaN and n + -p-n-n − -n + wurtzite GaN structures have been studied by a Monte Carlo particle simulation which solves the Boltzmann transport and Poisson's equations along with equations governing the associated circuit elements and parasitic contact resistance. It is shown that at 300 K in the 230-250 GHz frequency range over 350 mW microwave power can be delivered by the n + -p-n-n − -n + wurtzite GaN structure in continuous wave operation mode and over 1.3 W in pulsed mode.

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“…On the other hand, N-way combiners can provide higher efficiencies since the output power generated by N devices is summed directly in a single step. A common approach is to integrate the solid-state devices with a resonant cavity (Bauer, Freyer, & Claassen, 1997). Alternatively, combining can be done through a nonresonant structure (Kurokawa, 1970), which typically offers the prospect of a wider bandwidth operation.…”

Section: Introductionmentioning

confidence: 99%

Printed sectoral horn power combiner

Boccia

Emanuele

Shamsafar

et al. 2014

International Journal of Electronics

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In this work, it is presented a new configuration of planar power combiner/divider based on an H-plane sectoral horn antenna. This component is proposed to realise the basic building blocks of printed power-combining amplifiers. It will be shown how the sectoral horn elements can be implemented on substrate integrated waveguide and multilayer printed circuit board technologies, thus obtaining a high integration level. In the following, the design procedure will be described reporting an example of an 11-stage power divider/combiner in C-band. A prototype has been fabricated, and the measured results compared with the numerical model. Experimental results are in good agreement with theoretical expectations showing a single-stage efficiency of about 90% and a bandwidth of 40%.

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A resonant-cap power combiner for two-terminal millimeter-wave devices

Cited by 5 publications

References 12 publications

Monte Carlo simulation of 4H-SiC IMPATT diodes

Monte Carlo simulation of 4H-SiC IMPATT diodes

Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique

Printed sectoral horn power combiner

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