A RF CMOS low noise amplifier for WiMAX applications

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from -25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm 2 that is the lowest-ever reported chip area for this frequency band was achieved.

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“…For this, the High Q active inductor circuit that was proposed by [16], and is shown in Fig. 8(a), is used.…”

Section: Active Inductor and Parallel Resonancementioning

confidence: 99%

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

Bhuiyan

Reaz²,

Badal

et al. 2016

Transactions on Electrical and Electronic Materials

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“…But the disadvantage of this design is the high power consumption. Inductor less LNA with CGLNA is also used in [10]. However, it consumes high power.…”

Section: Introductionmentioning

confidence: 99%

An Active Inductor Based Low Noise Amplifier for RF Receiver

Aljarajreh

Reaz

Amin

et al. 2013

ElAEE

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Low Noise Amplifier (LNA) is a significant part in Radio Frequency (RF) receivers and plays a key role in the chip size and the implementation cost. An LNA for RF receivers utilizing the active inductor is presented. The proposed design is an alternative solution to overcome the usage of passive inductors to reduce the chip area. Besides, the active inductor reduces the parasitic capacitors affect at high frequencies. Designed in 0.18-µm CMOS process, the LNA achieves a voltage gain of 20dB, a minimum Noise Figure (NF) of 3.1 dB with low power consumption and good input and output impedance matching at 2.45 GHz. With 0.003 mm 2 chip area, the proposed design is suitable for portable wireless communication devices.

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Compact WiMAX Low Noise Amplifier Using Active Inductor

Kumari

Bhuvan

2011

2011 International Conference on Devices and Communications (ICDeCom)

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A RF CMOS low noise amplifier for WiMAX applications

Cited by 5 publications

References 19 publications

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

An Active Inductor Based Low Noise Amplifier for RF Receiver

Compact WiMAX Low Noise Amplifier Using Active Inductor

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