Compact WiMAX Low Noise Amplifier Using Active Inductor

Kumari, K. Surya; Bhuvan, B.

doi:10.1109/icdecom.2011.5738483

Cited by 2 publications

(2 citation statements)

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“…Active inductors (AIs) synthesized by transistors have attracted increasing interest due to a number of unique advantages over its spiral counterpart including small chip area consumption, large inductance with wide tuning range, large and tunable quality factor, and high self-resonant frequency. [1][2][3][4][5] The popular synthesis method of AI is based on Gyrator-C principle. A gyrator consists of two back-to-back connected transistors as transconductors, and input capacitance C π of one transconductor acts as the load of the other transconductor, [1,6] then the gyrator-C behaves as a single-ended inductor.…”

Section: Introductionmentioning

confidence: 99%

“…Kia et al [1,6,9] proposed novel AIs and derived that L s can be expressed by transistor model parameters, so can Q and ω 0 . Kumari et al [3] studied the dependence of L s on the load capacitance C. Robert et al [10] discussed the Q enhance-ment with the feedback resistance R f . Chun et al [11] discussed the effect of the input signal voltage on L s and improved the AI linearity.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

Zhao¹,

Zhang²,

Xie³

et al. 2016

Chinese Phys. B

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The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor (AI), such as the effective inductance L s , quality factor Q, and self-resonant frequency ω 0 is analyzed based on 0.35-µm SiGe BiCMOS process. The simulation results show that for AI operated under fixed current density J C , the HBT lateral structure parameters have significant effect on L s but little influence on Q and ω 0 , and the larger L s can be realized by the narrow, short emitter stripe and few emitter stripes of SiGe HBTs. On the other hand, for AI with fixed HBT size, smaller J C is beneficial for AI to obtain larger L s , but with a cost of smaller Q and ω 0 . In addition, under the fixed collector current I C , the larger the size of HBT is, the larger L s becomes, but the smaller Q and ω 0 become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors.

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