An Active Inductor Based Low Noise Amplifier for RF Receiver

Aljarajreh, Hamzeh; Reaz, Mamun Bin Ibne; Amin, Md. Syedul; Husain, Hafizah

doi:10.5755/j01.eee.19.5.2158

Cited by 6 publications

(3 citation statements)

References 9 publications

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“…Consequently, this specification leads to a great development of CMOS RF usage in a research area. The reasons are due to the low cost and size which are capable to be fabricated on a single chip and can be integrated in many applications [3].…”

Section: Introductionmentioning

confidence: 99%

Ultra-low power 0.45 mW 2.4 GHz CMOS low noise amplifier for wireless sensor networks using 0.13-m technology

Murad

Azizan

Hasan³

2020

Bulletin EEI

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This paper describes the design topology of a ultra-low power low noise amplifier (LNA) for wireless sensor network (WSN) application. The proposed design of ultra-low power 2.4 GHz CMOS LNA is implemented using 0.13-μm Silterra technology. The LNA benefits of low power from forward body bias technique for first and second stages. Two stages are implemented in order to enhance the gain while obtaining low power consumption for overall circuit. The simulation results show that the total power consumed is only 0.45 mW at low supply voltage of 0.55 V. The power consumption is decreased about 36% as compared with the previous work. A gain of 15.1 dB, noise figure (NF) of 5.9 dB and input third order intercept point (IIP3) of -2 dBm are achieved. The input return loss (S11) and the output return loss (S22) is -17.6 dB and -12.3 dB, respectively. Meanwhile, the calculated figure of merit (FOM) is 7.19 mW-1.

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Section: Introductionmentioning

confidence: 99%

Ultra-low power 0.45 mW 2.4 GHz CMOS low noise amplifier for wireless sensor networks using 0.13-m technology

Murad

Azizan

Hasan³

2020

Bulletin EEI

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“…Moreover, they are not suitable for RF circuits where high Q factor and high inductance are required. Active inductor is one of the promising solutions to overcome these limitations [16,17]. Therefore, in this study, an active inductor based bandpass filter design is proposed for 2.4 GHz ISM band RFID transponder.…”

Section: Introductionmentioning

confidence: 99%

Design of a band-pass filter in 0,18 μm CMOS for 2,4 GHz reader-less RFID transponder

et al. 2017

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Original scientific paper Radio Frequency Identification (RFID) based systems are ubiquitous nowadays. Band pass filters always play an important role in overall performance of an RFID transponder. In this paper, a band pass filter with a transistor only active inductor is presented for compact high performance reader-less RFID transponder. Post layout simulation result reveals that the centre frequency of the filter can be set to 2,42 GHz frequency with a bandwidth of 38 MHz. The filter core occupies an area of 0,004 mm 2 and dissipates only 1,3 mW at 1,5 V supply voltage. CEDEC 0,18 µm CMOS technology in Mentor Graphics environment has been used for the design of the proposed filter. Keywords: active inductor; band-pass filter; CMOS (Complementary Metal-Oxide Semiconductor); RFID (Radio Frequency Identification)Dizajn pojasnog filtra u 0,18 μm CMOS za 2,4 GHz RFID transponder bez čitača Izvorni znanstveni članak Sustavi temeljeni na Radio Frequency Identification (RFID) sada su široko rasprostranjeni. Pojasno fazni filtri igraju važnu ulogu u funkcioniranju RFID transpondera. U ovom radu, pojasno fazni filtar s induktorom aktivnim samo s tranzistorom prikazan je za kompaktni RFID transponder bez čitača visokih performansi. Rezultat simulacije rasporeda otkriva da središnja frekvencija filtra može biti postavljena na frekvenciju od 2,42 GHz sa širinom pojasa od 38 MHz. Jezgra filtra zauzima površinu od 0,004 mm 2 i gubi samo 1,3 mW kod napona napajanja od 1,5 V. Predloženi filtar dizajniran je pomoću CEDEC 0,18 μm CMOS tehnologije u Mentor Graphics okruženju. Ključne riječi: aktivni induktor; pojasno fazni filtar; CMOS (dopunski metalno oksidni poluvodič); RFID (radio frekvencijska identifikacija)

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“…In the 1980s, the power MOSFET appeared as the dominant power device due to its high-switching frequency operation (above 100 kHz), easier driving requirement and higher reliability [10]. With the rapid development of CMOS technology, many variations of CMOS voltage regulators have appeared [12][13]. There are several types of voltage regulators such as LDO linear regulator, Switch-Inductor Regulator (switching regulator) and Switch-Capacitor Regulator (charge pump) [4].…”

Section: Introductionmentioning

confidence: 99%

Evolution of Low Drop Out Voltage Regulator in CMOS Technologies

Mustafa

Amin

Reaz

et al. 2015

ELECTROTECHNICAL REVIEW

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The demand for low voltage devices has initiated the development of Low Drop Out (LDO) regulator in manifold. This paper presents a review of various LDO frameworks that have been implemented in CMOS technologies and the impact of frameworks related to the parameters of the LDO. The LDO architecture is evaluated through its Power Supply Rejection (PSR) and transient response performance. The transient response performance mostly depends on the added buffer and the PSR performance depends on the pass device capacitance and the LDO loop gain. \ Streszczenie. W artykule przedstawiono przegląd rozwiązań układów LDO (Low Drop Pout) w technologii CMOS. Przedstawiono także rozwiązania typu PSR-Power Supply Rejection. Analizowano dynamikę tych układów. Tendencje rozwojowe układów LDO (Low Drop Out) w technologii CMOS

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An Active Inductor Based Low Noise Amplifier for RF Receiver

Cited by 6 publications

References 9 publications

Ultra-low power 0.45 mW 2.4 GHz CMOS low noise amplifier for wireless sensor networks using 0.13-m technology

Ultra-low power 0.45 mW 2.4 GHz CMOS low noise amplifier for wireless sensor networks using 0.13-m technology

Design of a band-pass filter in 0,18 μm CMOS for 2,4 GHz reader-less RFID transponder

Evolution of Low Drop Out Voltage Regulator in CMOS Technologies

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