A self-consistent particle simulation for (AlGa) As/GaAs HBTs with improved base-collector structures

Abstract

Research a n d D e v e l o p m e n t C e n t e r , T o s h i b a C o r p o r a t i o n 1 K o m u k a i T o s h i b a c h o , S a i w a i -k u , K a w a s a k i -s h i 2 1 0 , J a p a n ABSTRACT A one-dimensional self-consistent particle simulator was d e v e l o p e d f o r ( A l G a ) A s / G a A s h e t e r o j u n c t i o n b i p o l a r transistors (HBTs) to investigate how far the device performance can be improved by positively utilizing non-equilibrium electron transport phenomena under a heavily doped base condition. Computation was thus carried out for HBTs with various c a t e g o r i e s o f b a s e a n d c o l l e c t o r s t r u c t u r e s . T h e e l e c t r o n transport mechanisms are discussed in detail according to the results in conjunction with the Feduction in base-to-collector transit time.

Large signal modeling of HBT's including self-heating and transit time effects

“…The average carrier velocity-vs-position in the basecollector space region may be found using Monte-Carlo simulations [41]- [43]. However, if a dual constant electron velocity profile ( Fig.…”

Study on Possible Double Peaks in CutoffFrequency Characteristics of AlGaAs/GaAsHBTs by Energy Transport Simulation

“…Since non equilibrium carrier transport becomes important in the HBTs, carrier energy should be considered in the modeling of them. For this purpose, the Monte Carlo simulation [1,2] and so-called an energy transport model [3][4][5][6][7] have been applied to analyze the characteristics of A1GaAs/GaAs HBTs.…”

Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors

“…Monte Carlo (MC) device simulator DAMOCLES [4] used in this work differs from previous Monte Carlo simulators for bipolar transistors [5][6][7] in the following aspects:…”