A SEM-EBIC minority-carrier lifetime-measurement technique

Ioannou, D.E.

doi:10.1088/0022-3727/13/4/014

Cited by 24 publications

(12 citation statements)

References 4 publications

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“…which is identical to the expression derived by Ioannou and Dimitriadis [11]. The same result can also be obtained from (4.5) and (4.7) by taking the limit as A ~ oo.…”

Section: P(xy)=2~ko(((x-xo)2+(y-yo)2)i/2)-2~ko(((x-xo)2+(y+yo)supporting

confidence: 86%

“…Through repeated integration by parts in (5.2), using the well-known recurrence relation for the modified Bessel functions Km, we deduce the complete asymptotic expansion l/2yorr,/2X3o/2 (6.12) This result is identical to the asymptotic expansion derived by Ioannou and Dimitriadis [11]. Notice that (6.12) also follows by setting ~ = oo in (6.3).…”

Section: )supporting

confidence: 63%

“…The case X = oo corresponding to an infinite surface recombination velocity v is of particular interest, since it is the only case in which the diffusion problem (2.4) has been solved in the literature [9,10,11]. When X = oo, the boundary conditions (2.4b, c) reduce to p(x, 0) = 0 applied along the entire boundary y = 0.…”

Section: Limiting Cases X = Oo and K =mentioning

confidence: 99%

“…Then the second boundary condition in (1.7) reduces to C = 0 and this condition is seen to prevail along the entire boundary y = 0. The method of images can now be brought into play and a simple solution is readily obtained [9,10,11].…”

Section: Introductionmentioning

confidence: 99%

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A diffusion problem in semiconductor technology

1984

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This paper deals with a mathematical model of a SEM-EBIC experiment devised to measure the diffusion length of semiconductor materials. In the model the semiconductor material occupies a half-space, of which the plane bounding surface is partly covered by a semi-infinite current-collecting junction, the Schottky diode. A scanning electron microscope (SEM) is used to inject minority carriers into the material. It is assumed that injection occurs at a single point only. The injected minority carriers diffuse through the material and recombine in the bulk at a rate proportional to their local concentration. Recombination also occurs at the free surface of the material, not covered by the junction, where its rate is determined by the surface recombination velocity v. The mathematical model gives rise to a mixed-boundary-value problem for the diffusion equation, which is solved by means of the Wiener-Hopf technique. An analytical expression is derived for the measurable electron-beam-induced current (EBIC) caused by the minority carriers reaching the junction. The solution obtained is valid for all values of v, and special attention is given to the limiting cases v = o0 and v = 0. Asymptotic expansions of the induced current, which are usable when the injection point is more than a few diffusion lengths away from the edge of the junction, are derived as well.

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“…which is identical to the expression derived by Ioannou and Dimitriadis [11]. The same result can also be obtained from (4.5) and (4.7) by taking the limit as A ~ oo.…”

Section: P(xy)=2~ko(((x-xo)2+(y-yo)2)i/2)-2~ko(((x-xo)2+(y+yo)supporting

confidence: 86%

Section: )supporting

confidence: 63%

Section: Limiting Cases X = Oo and K =mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A diffusion problem in semiconductor technology

1984

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“…In EBIC, few-electron-volt secondary electrons and electron-hole pairs created by a primary beam at 250 eV to 25 keV (Figure 1.a) interact strongly with the built-in device fields. Current is collected via auxiliary electrodes connected to different parts of the device ( Figure 1.b), resulting in a local measurement of the electronic structure stimulated by the incident electron beam 18 .…”

Section: Introductionmentioning

confidence: 99%

Stateful characterization of resistive switching TiO2 with electron beam induced currents

et al. 2017

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Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam-induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2-based devices. By comparing beam energy-dependent electron beam-induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam-induced current microscopy, it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.

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Electron‐beam‐induced conduction in fluorinated ethylene propylene copolymer and its acrylonitrile graft copolymer

Joshi

Ghatge

Jog

et al. 1983

J. Polym. Sci. Polym. Phys. Ed.

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Electron‐beam‐induced conductivity (EBIC) studies were carried out on fluorinated ethylene propylene copolymer (FEP) and its acrylonitrile graft copolymer (FEP‐g‐AN). The current transport parallel to the surface under the influence of an electron beam of medium energy (6–30 keV) is reported. The gain in EBIC is calculated and its characteristic variation as a function of beam energy is studied. Minima in the gain versus energy curves have been obtained around 21 keV for FEP, 12 and 18 keV for FEP‐g‐AN, and 12 keV for polyacrylonitrile (PAN). This behavior is explained by assuming the existence of electron trapping bands close to the surface, at characteristic distances below the surface of the polymeric film corresponding to the range of incident electrons. Gains of the order of 5, 12, and 30 have been obtained respectively for FEP, FEP‐g‐AN, and PAN for the maximum energy of incident electrons used.

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A SEM-EBIC minority-carrier lifetime-measurement technique

Cited by 24 publications

References 4 publications

A diffusion problem in semiconductor technology

A diffusion problem in semiconductor technology

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Electron‐beam‐induced conduction in fluorinated ethylene propylene copolymer and its acrylonitrile graft copolymer

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