A Silicon-Embedded Inductor Surrounded by Porous Silicon for Improved Quality Factor

Wu, Renbiao; Liao, Niteng; Sin, J.K.O.; Bardet, Benjamin; Billoue, Jérôme; Gautier, Gaël

doi:10.1149/2.0141806jss

Cited by 2 publications

(1 citation statement)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was experimentally demonstrated that the BSEI surrounded by PS with an 8 µmthick conformal PS layer surrounding deep silicon trenches can be successfully realized. In addition, the experimental characterization results showed that a 24% improvement in the Qmax and an 86% increase in the Qmax frequency were still achieved even if the process is not optimized yet (14). This demonstrates that PSi is also promising for integrated power management applications.…”

Section: Psi For 3d Backside Silicon-embedded Inductorsmentioning

confidence: 90%

(Invited) Recent Advances in Porous Silicon Based Microelectronic Devices

Gautier¹,

Billoue²,

Defforge³

et al. 2018

ECS Trans.

View full text Add to dashboard Cite

In this paper, we show some recent advances that have been performed in the field of Porous Silicon (PSi) applied to microelectronic devices. Indeed, many components can implement the specific properties of this nanostructured material. Therefore, it has been identified as a serious candidate for the integration of complex functions in a single silicon wafer in a "more than Moore" context. In particular, it will be shown that PSi etching is nowadays mastered at a wafer scale on localized areas, 3D surfaces or on the backside of devices. Some typical examples of applications such as RF devices, AC power switches or ultrasonic transducers will be described in order to illustrate the benefits PSi technology can provide.

show abstract

Section: Psi For 3d Backside Silicon-embedded Inductorsmentioning

confidence: 90%

(Invited) Recent Advances in Porous Silicon Based Microelectronic Devices

Gautier¹,

Billoue²,

Defforge³

et al. 2018

ECS Trans.

View full text Add to dashboard Cite

show abstract

Integrating porous silicon layer backing to capacitive micromachined ultrasonic transducers (CMUT)-based linear arrays for acoustic Lamb wave attenuation

Lascaud

Defforge

Colin

et al. 2022

Journal of Applied Physics

View full text Add to dashboard Cite

Lamb waves propagating in the substrate of linear arrays integrated on a silicon (Si) chip may degrade the elementary performances of the imaging device. In fact, these waves are radiated in the imaging medium. Their superimposition with the relevant ultrasonic signals alters the image performances (i.e., lateral and axial resolutions). In this article, we investigate the interest of using a thin layer of porous silicon (PS) as an absorbing material, aiming to reduce the total device dimensions compared to more traditional backing materials and facilitate device integration with on-chip electronics. The proposed method was applied to Capacitive Micromachined Ultrasonic Transducers. To this purpose, a PS layer with a thickness of 60 μm and a porosity of 50% was etched on the rear side of a 256-elements linear array. The electroacoustic response of the elements integrated on the Si substrate was compared to those on the Si/PS substrate, showing no deterioration of the acoustic characteristics (i.e., center frequency and bandwidth) after PS layer fabrication. To assess the PS silicon layer influence on Lamb wave attenuation, acoustic cross-talks were measured for each array element. The radio-frequency dataset was used to determine the dispersion curves of Lamb waves in the substrate. The comparison between the two substrates showed a significant attenuation value (superior to 30 dB) of Lamb waves induced by the PS layer.

show abstract

A Silicon-Embedded Inductor Surrounded by Porous Silicon for Improved Quality Factor

Cited by 2 publications

References 23 publications

(Invited) Recent Advances in Porous Silicon Based Microelectronic Devices

(Invited) Recent Advances in Porous Silicon Based Microelectronic Devices

Integrating porous silicon layer backing to capacitive micromachined ultrasonic transducers (CMUT)-based linear arrays for acoustic Lamb wave attenuation

Contact Info

Product

Resources

About