A silicon-on-insulator quantum wire

Quantum-wire effects in trigate SOI MOSFETs

“…It was first measured on double-gate devices in 1994 [3,4] and has been confirmed by many research groups since [5][6][7][8][9][10]. It has been observed in triple-gate SOI MOSFETs as well [11][12][13]. When a multi-gate MOSFET operates in the volume inversion regime, the electrons form a low-dimensional electron gas (a twodimensional electron gas (2DEG) for a double-gate device and a one-dimensional electron gas (1DEG) for a trigate, P-gate, X-gate or surrounding-gate FET).…”

Low-temperature conductance oscillations in junctionless nanowire transistors

“…As a rule of thumb, oscillations can be observed if the temperature T at which the measurement takes place is not too large compared to ⌬E / k B where ⌬E is the energy difference between subbands, and if the drain voltage is lower than ⌬E / q. [2][3][4][5][6] In inversion-mode trigate MOSFETs with a small cross section, conduction around threshold occurs in the center ͑bulk͒ of the device. This effect is called "volume inversion."…”

Analog performance investigation of misaligned double gate junctionless transistor

“…When the device dimension of metal oxide semiconductor field effect transistor (MOSFET) is scaled down, the source and drain comes so close to each other that the gate is los-B S. Intekhab Amin intekhabamin@gmail.com 1 Department of Electronics and Communication Engineering, Dr. B. R. Ambedkar National Institute of Technology Jalandhar, Jalandhar 144011, India ing electrostatic control over the channel and source drain coupling increases, results in short channel effect (SCE). To overcome the aforementioned problem more than one gate are used to control the channel, called multiple gate field effect transistor (MUGFET) [1].…”

“…To overcome the aforementioned problem more than one gate are used to control the channel, called multiple gate field effect transistor (MUGFET) [1]. A MUGFET such as double gate MOSFET [2], FinFET [3][4][5] and gate all around structures [5,6] are used where the gate is wrapped around the thin silicon film, which provides better electrostatic control.…”