A simple alcohol-chemical vapor deposition synthesis of single-layer graphenes using flash cooling

Miyata, Yasumitsu; Kamon, Keiichi; Ohashi, Kazunori; Kitaura, Ryo; Yoshimura, Masamichi; Shinohara, Hisanori

doi:10.1063/1.3458797

Cited by 85 publications

(65 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Graphene layer growth on Ni substrate with this precursor has been demonstrated [12,13]. Here graphene films were grown on copper foil using a mixture of argon and ethanol, for comparing with the methane grown films.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of Graphene Films on Copper Substrates by CVD of Different Precursors

Giorgi

Dikonimos

Falconieri

et al. 2012

Carbon Nanostructures

View full text Add to dashboard Cite

In the present work, graphene films of the order of 1 cm 2 were grown on copper foil substrates by CVD using hydrogen/methane or hydrogen/argon/ethanol mixtures as gas precursors. The growth processes were performed near 1,000 • C both at atmospheric and low pressures. A system for the fast cooling of the sample, based on the fast extraction from the hot zone of the furnace, was implemented allowing for rapid decrease of the temperature below 600 • C in few seconds. Samples grown under different conditions were analyzed by SEM, Raman spectroscopy and XPS with the aim to assess their characteristics and to refine the growth process.

show abstract

Section: Resultsmentioning

confidence: 99%

Synthesis of Graphene Films on Copper Substrates by CVD of Different Precursors

Giorgi

Dikonimos

Falconieri

et al. 2012

Carbon Nanostructures

View full text Add to dashboard Cite

show abstract

“…It is known that the CVD growth of graphene occurs through two different growth processes such as the carbon dissolution into metals and the surface diffusion of carbon on metal surface. 20,21 The result shown in Fig. 2 indicates that ex-situ annealing promotes dissolution, resulting in the formation of graphene.…”

Section: And T Egawamentioning

confidence: 85%

Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

Fujita

Banno

Aryal

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

Carbon layer has been grown on a Ni/SiO2/Si(111) substrate under high vacuum pressure by pulse arc plasma deposition. From the results of Raman spectroscopy for the sample, it is found that graphene was formed by ex-situ annealing of sample grown at room temperature. Furthermore, for the sample grown at high temperature, graphene formation was shown and optimum temperature was around 1000 °C. Transmission electron microscopy observation of the sample suggests that the graphene was grown from step site caused by grain of Ni film. The results show that the pulse arc plasma technique has the possibility for acquiring homogenous graphene layer with controlled layer thickness.

show abstract

“…Cracks might be created in the last stage of CVD process, that is during rapid cooling stage. This stage, as a last part of the CVD process, is necessary to obtain high quality graphene [23].…”

Section: Graphene Surface Morphologymentioning

confidence: 99%

“…The authors demonstrated elevated I 2D /I G ratios in comparison with Cu. Common features of the above cited works are: Cu substrate (with the exception of [23]), hydrogen assistance and the fact that graphene sheets had been transferred onto other substrates (usually SiO 2 /Si) prior to the actual characterization. In this work we present a comparative analysis of large-area graphene sheets grown on a polycrystalline Cu foil from two different types of carbon precursors, namely liquid (ethanol) versus conventional gaseous (methane).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Comparative Morphological Analysis of Graphene on Copper Substrate obtained by CVD from a Liquid Precursor

et al. 2017

View full text Add to dashboard Cite

Graphene film has been produced on untreated Cu substrate by a chemical vapor deposition technique in ambient pressure with liquid ethanol serving as the carbon precursor. The obtained material has been subjected to morphological study, directly on Cu substrate, by means of optical microscopy, scanning electron microscopy, atomic force microscopy, and a detailed Raman analysis. As a benchmark material, graphene obtained on Cu by a conventional CVD from gaseous methane was used. This simple experimental setup has proved to enable obtaining large area graphene samples with nearly 100% substrate coverage and large domains of one carbon layer. As compared to graphene from gaseous precursor, the presented approach resulted in visibly more defects and impurities. These imperfections are due to more complex precursor molecular structure and lack of Cu pretreatment with hydrogen, the later cause being easy to eliminate in course of further optimization of the method. The described approach can be regarded as a viable, low-cost, and experimentally simple alternative for the existing techniques of producing large area graphene. By providing direct comparison with the conventional method, the paper's intention is to provide deeper insight and to fill gap in the understanding of mechanisms involved in graphene formation on copper.

show abstract

A simple alcohol-chemical vapor deposition synthesis of single-layer graphenes using flash cooling

Cited by 85 publications

References 18 publications

Synthesis of Graphene Films on Copper Substrates by CVD of Different Precursors

Synthesis of Graphene Films on Copper Substrates by CVD of Different Precursors

Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

Comparative Morphological Analysis of Graphene on Copper Substrate obtained by CVD from a Liquid Precursor

Contact Info

Product

Resources

About