2012
DOI: 10.1007/978-3-642-20644-3_13
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Synthesis of Graphene Films on Copper Substrates by CVD of Different Precursors

Abstract: In the present work, graphene films of the order of 1 cm 2 were grown on copper foil substrates by CVD using hydrogen/methane or hydrogen/argon/ethanol mixtures as gas precursors. The growth processes were performed near 1,000 • C both at atmospheric and low pressures. A system for the fast cooling of the sample, based on the fast extraction from the hot zone of the furnace, was implemented allowing for rapid decrease of the temperature below 600 • C in few seconds. Samples grown under different conditions wer… Show more

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Cited by 4 publications
(4 citation statements)
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“…For a diversity of industrial uses, the CVD technique of graphene production is dependable, practical, and cost-effective. Meanwhile, current research has focused on developing a more sustainable method for producing graphene in large quantities and of excellent quality using CVD at temperatures below 100 °C [ 94 , 95 , 96 ]. Portraying graphene as a suitable option for future devices (flexible electronic) has certain drawbacks that must be addressed.…”
Section: Techniques For the Production Of Graphenementioning
confidence: 99%
“…For a diversity of industrial uses, the CVD technique of graphene production is dependable, practical, and cost-effective. Meanwhile, current research has focused on developing a more sustainable method for producing graphene in large quantities and of excellent quality using CVD at temperatures below 100 °C [ 94 , 95 , 96 ]. Portraying graphene as a suitable option for future devices (flexible electronic) has certain drawbacks that must be addressed.…”
Section: Techniques For the Production Of Graphenementioning
confidence: 99%
“…CVD growth of graphene on copper is attractive because of the reduced solubility of carbon on copper and the consequent surface limited growth. , , Unlike other substrates, Cu allows for the growth of graphene through the adsorption process, where the attractive interaction between C adatoms on the flat Cu surface is believed to promote island formation and fast growth. , Previous works demonstrated that CVD growth, even on polycrystalline Cu films, results in good quality and large size single layer graphene. , Here, during the CVD growth, carbon atoms follow the surface structure and bind more readily at the Cu grain boundary, which promotes grain boundary defects. ,, Advances such as electropolishing of the substrate, the two-step CVD process, and the pulsed CVD method serve to eliminate the Cu grain boundaries. Since the mechanical strength of CVD graphene membrane depends on the reduction of defects, these methods help to realize higher quality graphene . Similarly, chemical pretreatment and/or preannealing of the foil can be important growth parameters.…”
Section: Introductionmentioning
confidence: 99%
“…1 CVD growth of graphene on copper is attractive because of the reduced solubility of carbon on copper and the consequent surface limited growth. [7][8][9][10][11][13][14][15]22 Unlike other substrates, Cu allows for the growth of graphene through the adsorption process, where the attractive interaction between C adatoms on the flat Cu surface is believed to promote island formation and fast growth. 22,23 Previous works demonstrated that CVD growth, even on polycrystalline Cu films, results in good quality and large size single layer graphene.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Among many studies on the synthesis of graphene, thermal decomposition method, such as pyrolysis of SiC 1) wafer and films 2,3) and chemical vapor deposition (CVD) are considerably suitable for electronic applications owing to the possibility of largescale film growth. CVD requires catalytic metal films such as Ni 4) and Cu, 5,6) and post-transfer techniques are required to support the graphene on a substrate.…”
Section: Introductionmentioning
confidence: 99%