A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

Jain, S.C.; Roulston, D.J.

doi:10.1016/0038-1101(91)90149-s

Cited by 386 publications

(162 citation statements)

References 53 publications

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“…(10) a valuable tool for semiconductor device modeling, assuming that the proper corrections are made to convert the physical BGN given by Eq. (10) to the apparent BGN used in device modeling [60,61]. In the case of n-GaAs, however, the agreement with experimental results is far from satisfactory [5,7], with Eq.…”

Section: Band Gap Shrinkage Due To Doping Effectmentioning

confidence: 92%

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Si incorporation and Burstein–Moss shift in n-type GaAs

Hudait

Modak

Krupanidhi

1999

Materials Science and Engineering: B

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Silane (SiH 4 ) was used as an n-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium (TMGa) and arsine (AsH 3 ) as source materials. The electron carrier concentrations and silicon (Si) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage profiler and low temperature photoluminescence (LTPL) spectroscopy. The influence of growth parameters, such as SiH 4 mole fraction, growth temperature, TMGa and AsH 3 mole fractions on the Si incorporation efficiency have been studied. The electron concentration increases with increasing SiH 4 mole fraction, growth temperature, and decreases with increasing TMGa and AsH 3 mole fractions. The decrease in electron concentration with increasing TMGa can be explained by vacancy control model. The PL experiments were carried out as a function of electron concentration (10 17 −1.). The PL main peak shifts to higher energy and the full width at half maximum (FWHM) increases with increasing electron concentrations. We have obtained an empirical relation for FWHM of PL,. We also obtained an empirical relation for the band gap shrinkage, DE g in Si-doped GaAs as a function of electron concentration. The value of DE g (eV) = −2.75×10 − 8 n 1/3 , indicates a significant band gap shrinkage at high doping levels. These relations are considered to provide a useful tool to determine the electron concentration in Si-doped GaAs by low temperature PL measurement. The electron concentration decreases with increasing TMGa and AsH 3 mole fractions and the main peak shifts to the lower energy side. The peak shifts towards the lower energy side with increasing TMGa variation can also be explained by vacancy control model.

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Section: Band Gap Shrinkage Due To Doping Effectmentioning

confidence: 92%

“…(10) in the cases of p-GaSb and p-GaAs [54,60]. Earlier work [61] on the group IV semiconductors Si and Ge using essentially the same formulation as Eq. (10) also showed good experimental agreement for n-Si p-Si and n-Ge.…”

Section: Band Gap Shrinkage Due To Doping Effectmentioning

confidence: 99%

Si incorporation and Burstein–Moss shift in n-type GaAs

Hudait

Modak

Krupanidhi

1999

Materials Science and Engineering: B

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“…The three terms in equation (6) represent the exchange energy of the majority carriers, the correlation energy, and the impurity interaction energy, respectively. Equation (6) has been demonstrated to be valid for AZO, ITO and other IV, III-V, and II-VI semiconductors [14,18,19,42]. …”

Section: Bandgap Shiftmentioning

confidence: 99%

“…Based on Jain's model, in a heavily doped semiconductor, the bandgap renormalization can be described by [14,42] [21,22,37], the relative dielectric constant is 21.9 [43], and the values of Λ and N b are 1 [42]. The three terms in equation (6) represent the exchange energy of the majority carriers, the correlation energy, and the impurity interaction energy, respectively.…”

Section: Bandgap Shiftmentioning

confidence: 99%

Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

et al. 2013

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TitleStructural, optical, and electrical properties of indium doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition cm 2 /Vs, and transmittance over 80% (including the glass substrate) from 500-1500 nm. The optical bandgap of the films was found to be in the range of 2.7 to 3.2 eV using both the Tauc relation and the derivative of transmittance. The observed widening of the optical bandgap with increasing carrier concentration can be described well only by considering bandgap renormalization effects along with the Burstein-Moss shift for a nonparabolic conduction band.

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“…The nonlocal band to band tunneling (BTBT) model is used in simulation to check the tunneling in lateral direction and predict the performance of TFET [5]. Due to high doping concentration, band-gap narrowing (BGN) model is enabled [12]. Considering interface trap effect and presence of high impurity atom in the channel, Shockley-read-hall (SRH) model is also included.…”

Section: Device Structure and Operationmentioning

confidence: 99%