2008
DOI: 10.1016/j.matlet.2007.04.075
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A simple one step method for the synthesis of hexagonal Cd1−xZnxS (x=0–0.75)

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Cited by 22 publications
(11 citation statements)
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“…ZnS is a direct band gap semiconductor, with a bandgap for films and nanoparticles reported in the literature of 3.5-4.1 eV. 16,17,[27][28][29][30][31][32][33] Cu 2 S has an indirect band gap of 1.2 eV, and a direct band gap of 2.4 eV. 34,35 UV-Vis was performed on films from all stack configurations, and results of configurations 2 and 3 are shown in Figs.…”
Section: Resultsmentioning
confidence: 99%
“…ZnS is a direct band gap semiconductor, with a bandgap for films and nanoparticles reported in the literature of 3.5-4.1 eV. 16,17,[27][28][29][30][31][32][33] Cu 2 S has an indirect band gap of 1.2 eV, and a direct band gap of 2.4 eV. 34,35 UV-Vis was performed on films from all stack configurations, and results of configurations 2 and 3 are shown in Figs.…”
Section: Resultsmentioning
confidence: 99%
“…The lattice distance (interplanar spacing) d hkl for each phase varies linearly with composition as determined by inserting the values of 2q from the pseudo-Voigt fits in Bragg's Law, and a plot of the distances is given in the ESI †. 15,19,[38][39][40] Periodic PBE0 calculations verified the linear shift in the lattice distance as a function of film composition (not shown). The lattice constant is calculated…”
Section: Materials and Optical Propertiesmentioning
confidence: 86%
“…ZnS is a direct band gap semiconductor, with a band gap for films and nanoparticles reported in the literature of 3.5-4.1 eV. [12][13][14][15][16][17][18][19] FIG. 1.…”
Section: B Photospectroscopymentioning
confidence: 99%