Atomic layer deposition of Cd<sub>x</sub>Zn<sub>1−x</sub>S films

Bakke, Jonathan R.; Tanskanen, Jukka T.; Jung, Hee Joon; Sinclair, Robert; Bent, Stacey F.

doi:10.1039/c0jm02786c

Cited by 26 publications

(23 citation statements)

References 48 publications

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“…One of the notable differences of ALD among various deposition methods is that ALD enables a precise control of composition of the film by intermixing two different ALD processes in a single ALD step. This method is called supercycle and is frequently used for doping or alloy ratio control of ternary or quaternary compounds [18,22,160,161,162,163,164]. Hence, alloys of 2D TMDCs can be formed by sulfurization of alloyed metal oxides in which composition is precisely controlled by the ALD supercycle.…”

Section: Synthesis Of Mo 1àx W X S 2 By Sulfurization Of Aldgrown Mo 1àx W X O Ymentioning

confidence: 99%

Atomic layer deposition for nonconventional nanomaterials and their applications

Nam

2019

J. Mater. Res.

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Section: Synthesis Of Mo 1àx W X S 2 By Sulfurization Of Aldgrown Mo 1àx W X O Ymentioning

confidence: 99%

Atomic layer deposition for nonconventional nanomaterials and their applications

Nam

2019

J. Mater. Res.

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“…Another common type of hcp/ccp phase change is the wurtzite/zinc-blende phase change in semiconductors such as Si, InP, CdTe, Cd x Zn 1-x S, etc (Liu et al, 2013;Li et al, 2014;Wood & Sansoz, 2012;Bakke et al, 2011;Akopian et al, 2010;Bao et al, 2008;Murayama & Nakayama, 1994). Therefore this new fundamental understanding of the Al 2 O 3 /MgAl 2 O 4 interface migration mechanism might greatly promote understanding of growth and phase changes in many other materials.…”

Section: Impact For Further Workmentioning

confidence: 99%

Structure evolution of h.c.p./c.c.p. metal oxide interfaces in solid-state reactions

Habler

Griffiths

et al. 2018

Acta Crystallogr A Found Adv

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The structure of crystalline interfaces plays an important role in solid-state reactions. The AlO/MgAlO/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAlO layers have been grown between AlO and MgO, and the atomic structure of AlO/MgAlO interfaces at different growth stages was characterized using aberration-corrected scanning transmission electron microscopy. The oxygen sublattice transforms from hexagonal close-packed (h.c.p.) stacking in AlO to cubic close-packed (c.c.p.) stacking in MgAlO. Partial dislocations associated with steps are observed at the interface. At the reaction-controlled early growth stages, such partial dislocations coexist with the edge dislocations. However, at the diffusion-controlled late growth stages, such partial dislocations are dominant. The observed structures indicate that progression of the AlO/MgAlO interface into AlO is accomplished by the glide of partial dislocations accompanied by the exchange of Al and Mg cations. The interface migration may be envisaged as a plane-by-plane zipper-like motion, which repeats along the interface facilitating its propagation. MgAlO grains can adopt two crystallographic orientations with a twinning orientation relationship, and grow by dislocations gliding in opposite directions. Where the oppositely propagating partial dislocations and interface steps meet, interlinked twin boundaries and incoherent Σ3 grain boundaries form. The newly grown MgAlO grains compete with each other, leading to a growth selection and successive coarsening of the MgAlO grains. This understanding could help to interpret the interface reaction or phase transformation of a wide range of materials that exhibit a similar h.c.p./c.c.p. transition.

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“…The applications extend from planar‐type thin film deposition to pore‐size tuning, optical tuning, catalysis, Li‐ion batteries, and more. Currently, in addition to the traditional metal, oxide, semiconductor, and nitride thin layers, various thin films with special physical properties, such as up‐/down‐conversion luminescent properties, can also be obtained via the ALD procedure.…”

Section: Introductionmentioning

confidence: 99%

Modification and Resonance Tuning of Optical Microcavities by Atomic Layer Deposition

Wang

Huang

Mei

2014

Chemical Vapor Deposition

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Recently, enormous interest has been focused on the nanofabrication of optical micro-and nanocavities for applications in labon-a-chip and quantum optics. At the same time, the atomic layer deposition (ALD) process presents several advantages for the fabrication and modification of micro-and nanostructures because of its atomic level thickness fine-tuning and perfect coating conformability in three-dimensional (3D) structures. Hence, ALD technology has been directed into the field of optical microcavities for the tracking and tuning of their properties. In this short review, we will summarize recent progress in the application of ALD on optical microcavities. Firstly, we will briefly introduce ALD technology and emphasize its distinctive features when applied to optical microcavities. Then, various microcavities such as photonic crystals, opals, and tubular microcavities will be illustrated to demonstrate their development with the assistance of ALD technology. Such an influential manufacturing tool for optical devices could inspire numerous interesting applications, as concluded in the final part.

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Atomic layer deposition of Cd_xZn_1−xS films

Cited by 26 publications

References 48 publications

Atomic layer deposition for nonconventional nanomaterials and their applications

Atomic layer deposition for nonconventional nanomaterials and their applications

Structure evolution of h.c.p./c.c.p. metal oxide interfaces in solid-state reactions

Modification and Resonance Tuning of Optical Microcavities by Atomic Layer Deposition

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Atomic layer deposition of CdxZn1−xS films

Cited by 26 publications

References 48 publications

Atomic layer deposition for nonconventional nanomaterials and their applications

Atomic layer deposition for nonconventional nanomaterials and their applications

Structure evolution of h.c.p./c.c.p. metal oxide interfaces in solid-state reactions

Modification and Resonance Tuning of Optical Microcavities by Atomic Layer Deposition

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Atomic layer deposition of Cd_xZn_1−xS films